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1. (WO2020004153) POWER MODULE AND METHOD FOR MAKING SAME, AND POWER CONVERSION DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2020/004153 International Application No.: PCT/JP2019/024141
Publication Date: 02.01.2020 International Filing Date: 18.06.2019
IPC:
H01L 21/60 (2006.01) ,H01L 23/28 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
松井 智香 MATSUI, Chika; JP
藤野 純司 FUJINO, Junji; JP
近藤 聡 KONDO, Satoshi; JP
内ヶ崎 雅夫 UCHIGASAKI, Masao; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2018-12166327.06.2018JP
2018-22902406.12.2018JP
Title (EN) POWER MODULE AND METHOD FOR MAKING SAME, AND POWER CONVERSION DEVICE
(FR) MODULE DE PUISSANCE ET SON PROCÉDÉ DE FABRICATION AINSI QUE DISPOSITIF DE CONVERSION DE PUISSANCE
(JA) パワーモジュール及びその製造方法並びに電力変換装置
Abstract:
(EN) The power module (1) is provided with a plurality of conductive wire groups (30, 30, 35) and a sealing member (60). The plurality of conductive wire groups respectively include first bonding parts (30m, 30m, 35m) and second bonding parts (30n, 30p, 35n). The maximum interval between intermediate sections of a pair of conductive wire groups adjacent to each other is larger than a first interval between the first bonding parts of the pair of conductive wire groups adjacent to each other. The maximum interval between intermediate sections of a pair of conductive wire groups adjacent to each other is larger than a second interval between the second bonding parts of the pair of conductive wire groups adjacent to each other. Consequently, the reliability of the power module is improved.
(FR) L'invention concerne un module de puissance (1) pourvu d'une pluralité de groupes de fils conducteurs (30, 30, 35) et d'un élément de scellement (60). Les groupes de la pluralité de groupes de fils conducteurs comprennent respectivement des premières parties de liaison (30m, 30m, 35m) et des secondes parties de liaison (30n, 30p, 35n). L'intervalle maximal entre des sections intermédiaires de deux groupes de fils conducteurs adjacents l'un à l'autre est supérieur à un premier intervalle entre les premières parties de liaison des deux groupes de fils conducteurs adjacents l'un à l'autre. L'intervalle maximal entre des sections intermédiaires de deux groupes de fils conducteurs adjacents l'un à l'autre est supérieur à un second intervalle entre les secondes parties de liaison des deux groupes de fils conducteurs adjacents l'un à l'autre. Par conséquent, la fiabilité du module de puissance est améliorée.
(JA) パワーモジュール(1)は、複数の導電ワイヤ群(30;30;35)と、封止部材(60)とを備える。複数の導電ワイヤ群は、各々、第1ボンディング部(30m;30m;35m)と、第2ボンディング部(30n;30p;35n)とを含む。互いに隣り合う一対の導電ワイヤ群の中間部の間の最大間隔は、互いに隣り合う一対の導電ワイヤ群の第1ボンディング部の間の第1間隔よりも大きい。互いに隣り合う一対の導電ワイヤ群の中間部の間の最大間隔は、互いに隣り合う一対の導電ワイヤ群の第2ボンディング部の間の第2間隔よりも大きい。そのため、パワーモジュールは、向上された信頼性を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)