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1. WO2020004047 - SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND STORAGE MEDIUM

Publication Number WO/2020/004047
Publication Date 02.01.2020
International Application No. PCT/JP2019/023391
International Filing Date 13.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/304 (2006.01)
CPC
H01L 21/304
Applicants
  • 東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors
  • 相原 明徳 AIBARA, Meitoku; JP
Agents
  • 特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE; 東京都千代田区霞が関3丁目8番1号 虎の門三井ビルディング Toranomon Mitsui Building, 8-1, Kasumigaseki 3-chome, Chiyoda-ku, Tokyo 1000013, JP
Priority Data
2018-12231827.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING SYSTEM, AND STORAGE MEDIUM
(FR) PROCÉDÉ DE NETTOYAGE DE SUBSTRAT, SYSTÈME DE NETTOYAGE DE SUBSTRAT ET SUPPORT DE STOCKAGE
(JA) 基板洗浄方法、基板洗浄システムおよび記憶媒体
Abstract
(EN)
Provided according to an embodiment is a substrate cleaning method including a film-forming-liquid supplying step, a releasing-liquid supplying step, and a hydrophobic-liquid supplying step. In the film-forming-liquid supply step, a film-forming liquid (L1) including a volatile component and serving to form a film on a substrate (W) is supplied to the substrate (W). In the releasing-liquid supply step, a treating film (F) formed by solidifying or curing the film-forming liquid (L1) on the substrate (W) by volatilizing the volatile component is supplied with a releasing liquid (L2) for releasing the treating film (F) from the substrate (W). In the hydrophobic-liquid supply step, the substrate (W) to which the releasing liquid (L2) has been supplied is supplied with a hydrophobic liquid for hydrophobizing the substrate (W).
(FR)
Selon un mode de réalisation, l'invention concerne un procédé de nettoyage de substrat comprenant une étape d'alimentation en liquide filmogène, une étape d'alimentation en liquide de libération, et une étape d'alimentation en liquide hydrophobe. Dans l'étape d'alimentation en liquide filmogène, un liquide filmogène (L1) comprenant un composant volatil et servant à former un film sur un substrat est fourni au substrat (W). Dans l'étape d'alimentation en liquide de libération, un film de traitement (F) formé par solidification ou durcissement du liquide de formation de film (L1) sur le substrat (W) par volatilisation du composant volatil est fourni avec un liquide de libération (L2) pour libérer le film de traitement (F) du substrat (W). Dans l'étape d'alimentation en liquide hydrophobe, le substrat (W) auquel le liquide de libération (L2) a été fourni est fourni avec un liquide hydrophobe pour rendre hydrophobe le substrat (W).
(JA)
本開示の一態様による基板洗浄方法は、成膜処理液供給工程と、剥離処理液供給工程と、疎水化液供給工程とを含む。成膜処理液供給工程は、揮発成分を含み基板(W)上に膜を形成するための成膜処理液(L1)を基板(W)へ供給する。剥離処理液供給工程は、揮発成分が揮発することによって成膜処理液(L1)が基板(W)上で固化または硬化してなる処理膜(F)に対して処理膜(F)を基板(W)から剥離させる剥離処理液(L2)を供給する。疎水化液供給工程は、剥離処理液(L2)が供給された後の基板(W)に対し、基板(W)を疎水化させる疎水化液を供給する。
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