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1. WO2020004030 - CONTROL SYSTEM, SWITCH SYSTEM, POWER CONVERSION DEVICE, METHOD FOR CONTROLLING BIDIRECTIONAL SWITCH ELEMENT, AND PROGRAM

Publication Number WO/2020/004030
Publication Date 02.01.2020
International Application No. PCT/JP2019/023236
International Filing Date 12.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
338
with a Schottky gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
337
with a PN junction gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
808
with a PN junction gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
812
with a Schottky gate
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
04
Modifications for accelerating switching
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
K
PULSE TECHNIQUE
17
Electronic switching or gating, i.e. not by contact-making and -breaking
51
characterised by the use of specified components
56
by the use, as active elements, of semiconductor devices
60
the devices being bipolar transistors
68
specially adapted for switching ac currents or voltages
H01L 21/338 (2006.01)
H01L 21/337 (2006.01)
H01L 29/778 (2006.01)
H01L 29/808 (2006.01)
H01L 29/812 (2006.01)
H03K 17/04 (2006.01)
CPC
H01L 29/778
H01L 29/808
H01L 29/812
H03K 17/04
H03K 17/68
Applicants
  • パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors
  • 木下 雄介 KINOSHITA, Yusuke; --
  • 山田 康博 YAMADA, Yasuhiro; --
  • 梅田 英和 UMEDA, Hidekazu; --
Agents
  • 特許業務法人北斗特許事務所 HOKUTO PATENT ATTORNEYS OFFICE; 大阪府大阪市北区梅田一丁目12‐17梅田スクエアビル Umeda Square Bldg., 12-17, Umeda 1-chome, Kita-ku, Osaka-shi, Osaka 5300001, JP
Priority Data
2018-12545129.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) CONTROL SYSTEM, SWITCH SYSTEM, POWER CONVERSION DEVICE, METHOD FOR CONTROLLING BIDIRECTIONAL SWITCH ELEMENT, AND PROGRAM
(FR) SYSTÈME DE COMMANDE, SYSTÈME DE COMMUTATION, DISPOSITIF DE CONVERSION DE PUISSANCE, PROCÉDÉ DE COMMANDE D'ÉLÉMENT DE COMMUTATION BIDIRECTIONNEL, ET PROGRAMME
(JA) 制御システム、スイッチシステム、電力変換装置、双方向スイッチ素子の制御方法及びプログラム
Abstract
(EN)
The present invention addresses the problem of increasing a switching speed when a bidirectional switch element (1) is turned on. A control system (100) is provided with a control unit (101). The control unit (101) controls, when a bidirectional switch element (1) is turned on, the bidirectional switch element (1) so as to generate a time difference between a first timing for applying a voltage equal to or larger than a threshold voltage to a first gate electrode (G1) or to a second gate electrode (G2) corresponding to a source electrode on the low potential side between first and second source electrodes (S1, S2) and a second timing for applying a voltage equal to or larger than the threshold voltage to the gate electrode corresponding to the source electrode on the high potential side.
(FR)
La présente invention aborde le problème de l'augmentation d'une vitesse de commutation lorsqu'un élément de commutation bidirectionnel (1) est allumé. Un système de commande (100) est pourvu d'une unité de commande (101). L'unité de commande (101) commande, lorsqu'un élément de commutation bidirectionnel (1) est allumé, l'élément de commutation bidirectionnel (1) de manière à générer une différence de temps entre une première synchronisation d'application d'une tension supérieure ou égale à une tension de seuil à une première électrode de grille (G1) ou à une seconde électrode de grille (G2) correspondant à une électrode de source du côté faible potentiel entre des première et seconde électrodes de source (S1, S2) et une seconde synchronisation d'application d'une tension supérieure ou égale à la tension de seuil à l'électrode de grille correspondant à l'électrode de source du côté potentiel élevé.
(JA)
本開示の課題は、双方向スイッチ素子をターンオンさせるときのスイッチング速度を向上させることである。制御システム(100)は、制御部(101)を備える。制御部(101)は、双方向スイッチ素子(1)をターンオンさせる場合、第1のゲート電極(G1)又は第2のゲート電極(G2)であって第1のソース電極(S1)と第2のソース電極(S2)とのうち低電位側のソース電極に対応するゲート電極に閾値電圧以上の電圧を印加する第1タイミングと、高電位側のソース電極に対応するゲート電極に閾値電圧以上の電圧を印加する第2タイミングと、に時間差を生じさせるように双方向スイッチ素子(1)を制御する。
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