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1. (WO2020003895) FILM-FORMING METHOD AND FILM-FORMING DEVICE
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2020/003895 International Application No.: PCT/JP2019/021844
Publication Date: 02.01.2020 International Filing Date: 31.05.2019
IPC:
C23C 14/35 (2006.01) ,C23C 14/08 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
Applicants:
株式会社アルバック ULVAC, INC. [JP/JP]; 神奈川県茅ケ崎市萩園2500 2500, Hagisono, Chigasaki-shi, Kanagawa 2538543, JP
Inventors:
須田 具和 SUDA Tomokazu; JP
高橋 明久 TAKAHASHI Hirohisa; JP
Agent:
及川 周 OIKAWA Shu; JP
勝俣 智夫 KATSUMATA Tomoo; JP
土屋 亮 TSUCHIYA Ryo; JP
Priority Data:
2018-12113126.06.2018JP
Title (EN) FILM-FORMING METHOD AND FILM-FORMING DEVICE
(FR) PROCÉDÉ ET DISPOSITIF DE FORMATION DE FILM
(JA) 成膜方法および成膜装置
Abstract:
(EN) This film-forming method involves disposing, on a reverse surface side of a target, a plurality of magnetic circuits configured so as to be able to move in a first direction parallel to the reverse surface of the target, and disposing a substrate on a front surface side of the target and performing film-forming by magnetron sputtering, wherein: each of the magnetic circuits is provided with an annular magnet and a central magnet that is disposed on the inner side of the annular magnet, the polarity of a surface opposing the reverse surface of the target being different from the polarity of the annular magnet; a magnetic field, where a perpendicular component of the magnetic field generated from the magnetic circuits relative to the front surface of the substrate is 0, is formed in an annular shape on the front surface side of the target and between the annular magnets and the central magnets; and in the first direction, the magnetic circuits swing with a first movement distance L1 and a second movement distance L2 different from the first movement distance L1, the proportion of L1 and L2 per unit time where the magnetic circuits are moving being controlled.
(FR) L'invention concerne un procédé de formation de film qui consiste à disposer, sur un côté de surface inverse d'une cible, une pluralité de circuits magnétiques configurés de façon à être apte à se déplacer dans une première direction parallèle à la surface inverse de la cible, et disposer un substrat sur un côté de surface avant de la cible et réaliser une formation de film par pulvérisation magnétron, dans lequel : chacun des circuits magnétiques est muni d'un aimant annulaire et d'un aimant central qui est disposé sur le côté interne de l'aimant annulaire, la polarité d'une surface opposée à la surface inverse de la cible étant différente de la polarité de l'aimant annulaire ; un champ magnétique, où une composante perpendiculaire du champ magnétique généré par les circuits magnétiques par rapport à la surface avant du substrat étant de 0, est formé sous une forme annulaire sur le côté de la surface avant de la cible et entre les aimants annulaires et les aimants centraux ; et dans la première direction, les circuits magnétiques oscillent avec une première distance de mouvement L1 et une seconde distance de mouvement L2 différente de la première distance de mouvement L1, la proportion de L1 et L2 par unité de temps où les circuits magnétiques sont en mouvement étant commandée.
(JA) 本発明の成膜方法は、ターゲットの裏面側に、前記ターゲットの裏面と平行な第1方向に移動可能に構成された複数の磁気回路を配置するとともに、前記ターゲットの表面側に基板を配置して、マグネトロンスパッタ法により成膜を行う成膜方法であって、各磁気回路は、リング状磁石と、このリング状磁石の内側に配置されて前記ターゲットの裏面との対向面の極性が前記リング状磁石と異なる極性を有する中心磁石とを備え、前記ターゲットの表面側であって、前記リング状磁石と前記中心磁石との間には、前記磁気回路から発生する磁場のうち前記基板の表面に対する垂直成分が0となる磁場がリング状に形成され、前記第1方向において、前記磁気回路は、第一移動距離L1と、前記第一移動距離L1とは異なる第二移動距離L2とで揺動し、前記磁気回路が移動する単位時間あたりに占める前記L1と前記L2の割合を制御する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)