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1. (WO2020003722) SIC MEMBER
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2020/003722 International Application No.: PCT/JP2019/017417
Publication Date: 02.01.2020 International Filing Date: 24.04.2019
IPC:
H01L 21/3065 (2006.01) ,C01B 32/956 (2017.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
[IPC code unknown for C01B 32/956]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
株式会社アドマップ ADMAP INC. [JP/JP]; 岡山県玉野市玉原3丁目16番2号 3-16-2, Tamahara, Tamano-shi, Okayama 7060014, JP
Inventors:
ワン・ジューダ WANG Zhida; JP
Agent:
村上 友一 MURAKAMI Tomokazu; JP
関 博 SEKI Hiroshi; JP
Priority Data:
2018-12152327.06.2018JP
Title (EN) SIC MEMBER
(FR) ÉLÉMENT EN SIC
(JA) SiC部材
Abstract:
(EN) The purpose of the present invention is to provide a technology of favorably ensuring an external appearance of a SiC member. The present invention is a SiC member characterized by comprising: a first SiC layer having a first upper surface and a first lower surface, the first upper surface having an unevenness; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface contacting the first supper surface, and having an unevenness corresponding to the unevenness of the first upper surface. The second SiC layer has a recessed portion having a flat bottom surface that is recessed from the second upper surface to the second lower surface side. The bottom surface of the recessed portion is located above the second lower surface.
(FR) L'invention porte sur une technologie permettant d'assurer favorablement un aspect externe d'un élément en SiC. La présente invention est un élément SiC caractérisé en ce qu'il comprend : une première couche de SiC comportant une première surface supérieure et une première surface inférieure, la première surface supérieure présentant une irrégularité ; et une seconde couche de SiC comportant une seconde surface supérieure et une seconde surface inférieure, la seconde surface inférieure étant en contact avec la première surface supérieure et présentant une irrégularité correspondant à l'inégalité de la première surface supérieure. La seconde couche de SiC possède une partie évidée présentant une surface inférieure plate qui est en retrait de la seconde surface supérieure au côté de la seconde surface inférieure. La surface inférieure de la partie évidée est située au-dessus de la seconde surface inférieure.
(JA) 本発明は、SiC部材の外観を良好に確保するための技術を提供することを目的とする。本発明は、第1上面と第1下面とを有し、前記第1上面が凹凸を有する第1SiC層と、第2上面と第2下面とを有し、前記第2下面が前記第1上面に接しており前記第1上面の凹凸に対応する凹凸を有する第2SiC層と、を備えており、前記第2SiC層は、前記第2上面から前記第2下面側へと凹状となっている、平坦な底面を有する凹部を有し、前記凹部の前記底面は、前記第2下面よりも上方に位置することを特徴とするSiC部材である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)