Processing

Please wait...

Settings

Settings

1. WO2020003591 - SHOWER HEAD AND PROCESSING DEVICE

Publication Number WO/2020/003591
Publication Date 02.01.2020
International Application No. PCT/JP2019/006199
International Filing Date 20.02.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
H01L 21/31 (2006.01)
C23C 16/455 (2006.01)
H01L 21/3065 (2006.01)
CPC
C23C 16/455
H01L 21/027
H01L 21/3065
H01L 21/31
Applicants
  • 株式会社明電舎 MEIDENSHA CORPORATION [JP/JP]; 東京都品川区大崎2丁目1番1号 1-1, Osaki 2-chome, Shinagawa-ku, Tokyo 1416029, JP
Inventors
  • 野寄 剛示 NOYORI, Takeshi; JP
  • 森川 良樹 MORIKAWA, Yoshiki; JP
  • 三浦 敏徳 MIURA, Toshinori; JP
Agents
  • 小林 博通 KOBAYASHI, Hiromichi; JP
  • 富岡 潔 TOMIOKA, Kiyoshi; JP
  • 鵜澤 英久 UZAWA, Hidehisa; JP
  • 太田 友幸 OTA, Tomoyuki; JP
Priority Data
2018-12256628.06.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SHOWER HEAD AND PROCESSING DEVICE
(FR) POMME DE DOUCHE ET DISPOSITIF DE TRAITEMENT
(JA) シャワーヘッドおよび処理装置
Abstract
(EN)
An ozonation device (2) is provided with a processing chamber (4) in which a wafer (3) is disposed, and a shower head (1) provided in the processing chamber (4). The shower head (1) is disposed in a position away from a surface to be processed of the wafer (3) and facing the wafer (3). A surface of the shower head (1) facing the wafer (3) has gas ejection holes (1a) from which a gas to be supplied to the wafer (3) is ejected, and exhaust gas flow path portions (1b) comprising areas from which the gas is not ejected. A central portion of the shower head (1) has an area in which the gas ejection holes (1a) are formed, and a plurality of exhaust gas flow path portions (1b) extending from the central area toward the outer periphery of the shower head (1) are arranged in the circumferential direction of the shower head (1). The gas ejection holes (1a) are formed in each of areas disposed between the exhaust gas flow path portions (1b).
(FR)
La présente invention porte sur un dispositif d'ozonisation (2) qui est pourvu d'une chambre de traitement (4) dans laquelle une tranche (3) est disposée, et d'une pomme de douche (1) disposée dans la chambre de traitement (4). La pomme de douche (1) est disposée dans une position à distance d'une surface à traiter de la tranche (3) et en regard de cette dernière. Une surface de la pomme de douche (1) faisant face à la tranche (3) comporte des trous d'éjection de gaz (1a) depuis lesquels un gaz à fournir à la tranche (3) est éjecté, et des parties de trajet d'écoulement de gaz d'échappement (1b) comprenant des zones depuis lesquelles le gaz n'est pas éjecté. Une partie centrale de la pomme de douche (1) présente une zone où les trous d'éjection de gaz (1a) sont formés, et une pluralité de parties de trajet d'écoulement de gaz d'échappement (1b) partant de la zone centrale vers la périphérie extérieure de la pomme de douche (1) sont disposées dans la direction circonférentielle de la pomme de douche (1). Les trous d'éjection de gaz (1a) sont formés dans chacune des zones disposées entre les parties de trajet d'écoulement de gaz d'échappement (1b).
(JA)
ウェハ(3)が配置される処理チャンバ(4)と、処理チャンバ(4)内に設けられるシャワーヘッド(1)を備えるオゾン処理装置(2)である。シャワーヘッド(1)を、ウェハ(3)の被処理面から離れた位置であって、ウェハ(3)と向かい合うように備える。シャワーヘッド(1)のウェハ(3)と向かい合う面に、ウェハ(3)に供されるガスが噴き出すガス噴出穴(1a)と、ガスが噴き出さない領域である排出ガス流路部(1b)を設ける。シャワーヘッド(1)の中心部にガス噴出穴(1a)が形成される領域を設け、この領域からシャワーヘッド(1)の外周方向に延びる排出ガス流路部(1b)をシャワーヘッド(1)の周方向に並べて複数配置する。この排出ガス流路部(1b)に挟まれた領域にそれぞれガス噴出穴(1a)を形成する。
Latest bibliographic data on file with the International Bureau