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1. WO2020003436 - SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

Publication Number WO/2020/003436
Publication Date 02.01.2020
International Application No. PCT/JP2018/024584
International Filing Date 28.06.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
338
with a Schottky gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
812
with a Schottky gate
H01L 21/338 (2006.01)
H01L 29/778 (2006.01)
H01L 29/812 (2006.01)
CPC
H01L 29/778
H01L 29/812
Applicants
  • 三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors
  • 吉嗣 晃治 YOSHITSUGU Koji; JP
  • 仲村 恵右 NAKAMURA Keisuke; JP
  • 柳生 栄治 YAGYU Eiji; JP
Agents
  • 吉竹 英俊 YOSHITAKE Hidetoshi; JP
  • 有田 貴弘 ARITA Takahiro; JP
Priority Data
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置、および、半導体装置の製造方法
Abstract
(EN)
The technology indicated in the present specification relates to a semiconductor device and a manufacturing method therefor, and a purpose thereof is to provide a semiconductor device that has a high heat dissipation ability. A semiconductor device according to the technology indicated in the present specification comprises a diamond substrate (23) and nitride semiconductor layers (2, 3). The diamond substrate (23) comprises diamond. The nitride semiconductor layers (2, 3) are formed in the interiors of recesses (17) that are formed in an upper surface (109) of the diamond substrate (23).
(FR)
La technologie indiquée dans la présente invention concerne un dispositif à semi-conducteur et son procédé de fabrication, et un objectif de celle-ci est de fournir un dispositif à semi-conducteur qui a une capacité de dissipation de chaleur élevée. Un dispositif à semi-conducteur selon la technologie indiquée dans la présente invention comprend un substrat en diamant (23) et des couches semi-conductrices au nitrure (2, 3). Le substrat en diamant (23) comprend du diamant. Les couches semi-conductrices au nitrure (2, 3) sont formées à l'intérieur d'évidements (17) qui sont formés dans une surface supérieure (109) du substrat en diamant (23).
(JA)
本願明細書に開示される技術は、半導体装置およびその製造方法に関するものであり、かつ、高い放熱性能を有する半導体装置を提供することを目的とするものである。本願明細書に開示される技術に関する半導体装置は、ダイヤモンド基板(23)と、窒化物半導体層(2、3)とを備えるものである。ダイヤモンド基板(23)は、ダイヤモンドからなる。窒化物半導体層(2、3)は、ダイヤモンド基板(23)の上面(109)に形成された凹部(17)の内部に形成される。
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