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1. WO2020002028 - VCSEL ARRAY WITH SMALL PULSE DELAY

Publication Number WO/2020/002028
Publication Date 02.01.2020
International Application No. PCT/EP2019/065887
International Filing Date 17.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
022
Mountings; Housings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
026
Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
40
Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
42
Arrays of surface emitting lasers
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
17
Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
88
Lidar systems, specially adapted for specific applications
89
for mapping or imaging
G PHYSICS
01
MEASURING; TESTING
S
RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
7
Details of systems according to groups G01S13/, G01S15/, G01S17/127
48
of systems according to group G01S17/58
481
Constructional features, e.g. arrangements of optical elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
06
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062
by varying the potential of the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
18
Surface-emitting lasers (SE-lasers)
183
having a vertical cavity (VCSE-lasers)
H01S 5/022 (2006.01)
H01S 5/026 (2006.01)
H01S 5/042 (2006.01)
H01S 5/42 (2006.01)
G01S 17/89 (2006.01)
G01S 7/481 (2006.01)
CPC
G01S 17/894
G01S 7/4815
H01S 5/0207
H01S 5/02276
H01S 5/026
H01S 5/0425
Applicants
  • TRUMPF PHOTONIC COMPONENTS GMBH [DE/DE]; Lise-Meitner-Straße 13 89081 Ulm, DE
Inventors
  • WEIGL, Alexander; NL
  • GRONENBORN, Stephan; NL
  • MOENCH, Holger Joachim; NL
Agents
  • WITTE, WELLER & PARTNERPATENTANWÄLTE MBB; Postfach 10 54 62 70047 Stuttgart, DE
Priority Data
18179850.526.06.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) VCSEL ARRAY WITH SMALL PULSE DELAY
(FR) MATRICE VCSEL AVEC FAIBLE RETARD D'IMPULSION
Abstract
(EN)
The invention describes a Vertical Cavity Surface Emitting Laser (VCSEL) array (100) comprising at least two VCSEL sub-arrays, wherein each VCSEL sub-array comprises a multitude of VCSELs arranged on a substrate (110), wherein the at least two VCSEL sub-arrays are electrically contacted by means of a first electrical contact arrangement (105, 107) common to the VCSELs within a respective VCSEL sub-array, and a second electrical contact arrangement (150, 155), wherein the second electrical contact arrangement (150, 155) comprises a multitude of second electrical contacts (150), each second electrical contact (150) contacting a respective single VCSEL within the respective VCSEL sub-array individually, wherein each second electrical contact (150) comprises a second metal- semiconductor interface to a second semiconductor layer of an associated VCSEL of the multitude of VCSELs, wherein the second electrical contacts (150) are arranged to electrically pump the associated VCSEL along a current path to the first electrical contact arrangement (105, 107), wherein the current paths between the first electrical contact arrangement (105, 107) and the second electrical contacts (150) via the multitude of VCSELs are characterized by at least one symmetry selected out of the group of rotation symmetry, mirror symmetry and translation symmetry. The invention further relates to a light emitting device comprising such a VCSEL array (100), a time of flight camera comprising such a light emitting device or VCSEL array (100) and a method of manufacturing the VCSEL array (100).
(FR)
L'invention concerne une matrice VCSEL - diode laser à cavité verticale à émission par la surface - (100) comprenant au moins deux sous-matrices VCSEL, chaque sous-matrice VCSEL comprenant une multitude de VCSEL disposées sur un substrat (110), lesdits au moins deux sous-matrices VCSEL étant mises en contact électrique au moyen d'un premier agencement de contact électrique (105, 107) commun aux VCSEL dans une sous-matrice VCSEL respective, et un second agencement de contact électrique (150, 155), le second agencement de contact électrique (150, 155) comprenant une multitude de seconds contacts électriques (150), chaque second contact électrique (150) étant en contact avec une VCSEL individuelle respective dans la sous-matrice VCSEL respective, chaque second contact électrique (150) comprenant une seconde interface métal-semi-conducteur sur une seconde couche semi-conductrice d'une VCSEL associée de la multitude de VCSEL, les seconds contacts électriques (150) sont agencés pour pomper électriquement la VCSEL associée le long d'un trajet de courant vers le premier agencement de contact électrique (105, 107), les trajets de courant entre le premier agencement de contact électrique (105, 107) et les seconds contacts électriques (150) par l'intermédiaire de la multitude de VCSEL sont caractérisés par au moins une symétrie choisie parmi le groupe de symétrie de rotation, de symétrie spéculaire et de symétrie de translation. L'invention concerne en outre un dispositif électroluminescent comprenant une telle matrice VCSEL (100), une caméra à temps de vol (200) comprenant un tel dispositif électroluminescent ou une matrice VCSEL (100) et un procédé de fabrication de la matrice VCSEL (100).
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