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1. WO2020001940 - METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL BY THE FZ METHOD; DEVICE FOR CARRYING OUT THE METHOD AND SEMICONDUCTOR SILICON WAFER

Publication Number WO/2020/001940
Publication Date 02.01.2020
International Application No. PCT/EP2019/064554
International Filing Date 04.06.2019
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
13
Single-crystal growth by zone-melting; Refining by zone-melting
16
Heating of the molten zone
20
by induction, e.g. hot wire technique
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
13
Single-crystal growth by zone-melting; Refining by zone-melting
26
Stirring of the molten zone
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
30
Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
04
using magnetic fields
C30B 13/20 (2006.01)
C30B 13/26 (2006.01)
C30B 30/04 (2006.01)
CPC
C30B 13/20
C30B 13/26
C30B 30/04
Applicants
  • SILTRONIC AG [DE/DE]; Hanns-Seidel-Platz 4 81737 München, DE
Inventors
  • ALTMANNSHOFER, Ludwig; DE
  • MEISTERERNST, Götz; DE
  • RATNIEKS, Gundars; DE
  • ZITZELSBERGER, Simon; DE
Agents
  • STAUDACHER, Wolfgang; DE
Priority Data
10 2018 210 317.825.06.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUR HERSTELLUNG EINES EINKRISTALLS AUS HALBLEITERMATERIAL GEMÄSS DER FZ-METHODE; VORRICHTUNG ZUR DURCHFÜHRUNG DES VERFAHRENS UND HALBLEITERSCHEIBE AUS SILIZIUM
(EN) METHOD FOR PRODUCING A SINGLE CRYSTAL FROM SEMICONDUCTOR MATERIAL BY THE FZ METHOD; DEVICE FOR CARRYING OUT THE METHOD AND SEMICONDUCTOR SILICON WAFER
(FR) PROCÉDÉ DE FABRICATION D'UN MONOCRISTAL EN MATÉRIAU SEMI-CONDUCTEUR SELON LA MÉTHODE FZ ; DISPOSITIF DE MISE EN ŒUVRE DU PROCÉDÉ ET PLAQUETTE SEMI-CONDUCTRICE EN SILICIUM
Abstract
(DE)
Verfahren zur Herstellung eines Einkristalls aus Halbleitermaterial gemäß der FZ-Methode, Vorrichtung zur Durchführung des Verfahrens und Halbleiterscheibe aus Silizium. Das Verfahren umfasst das Schaffen einer Schmelzenzone zwischen einem Vorratsstab und einem wachsenden Einkristall; das Schmelzen von Material des Vorratsstabs in einem Hochfrequenz-Magnetfeld einer ersten Induktionsspule; das Kristallisieren von Material der Schmelzenzone auf dem wachsenden Einkristall; das Drehen des wachsenden Einkristalls um eine Drehachse und das Wechseln des Drehsinns und der Geschwindigkeit der Drehung nach einem vorbestimmten Muster; und das Aufprägen eines alternierenden Magnetfelds einer zweiten Induktionsspule auf die Schmelzenzone, wobei das alternierende Magnetfeld nicht achsensymmetrisch bezüglich der Drehachse des wachsenden Einkristalls ist.
(EN)
Method for producing a single crystal from semiconductor material by the FZ method, device for carrying out the method and semiconductor silicon wafer. The method comprises creating a melt zone between a feed rod and a growing single crystal; melting material of the feed rod in a high-frequency magnetic field of a first induction coil; crystallizing material of the melt zone on the growing single crystal; turning the growing single crystal about an axis of rotation and changing the direction of rotation and the speed of the rotation on the basis of a predetermined pattern; and imparting an alternating magnetic field of a second induction coil to the melting zone, wherein the alternating magnetic field is not axially symmetrical with respect to the axis of rotation of the growing single crystal.
(FR)
L'invention concerne un procédé de fabrication d'un monocristal en matériau semi-conducteur selon la méthode FZ, un dispositif de mise en œuvre du procédé et une plaquette semi-conductrice en silicium. Le procédé consiste à réaliser une zone de fusion entre un lingot et un monocristal croissant ; à faire fondre du matériau du lingot dans un champ magnétique à haute fréquence dans une première bobine d'induction ; à cristalliser du matériau de la zone de fusion sur le monocristal croissant ; à faire tourner le monocristal croissant autour d'un axe de rotation et à changer le sens de rotation et la vitesse de la rotation en fonction d'un modèle préétabli ; et à appliquer un champ magnétique alternatif d'une deuxième bobine d'induction sur la zone de fusion, le champ magnétique alternatif n'étant pas axialement symétrique par rapport à l'axe de rotation du monocristal croissant.
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