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1. (WO2020001939) METHOD AND DEVICE FOR DRAWING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR WAFER OF SILICON
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2020/001939 International Application No.: PCT/EP2019/064553
Publication Date: 02.01.2020 International Filing Date: 04.06.2019
IPC:
C30B 15/04 (2006.01) ,C30B 15/10 (2006.01) ,C30B 15/14 (2006.01) ,C30B 15/16 (2006.01) ,C30B 29/06 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
02
adding crystallising materials or reactants forming it in situ to the melt
04
adding doping materials, e.g. for np-junction
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
10
Crucibles or containers for supporting the melt
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
14
Heating of the melt or the crystallised materials
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
14
Heating of the melt or the crystallised materials
16
by irradiation or electric discharge
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
SILTRONIC AG [DE/DE]; Hanns-Seidel-Platz 4 81737 München, DE
Inventors:
KNERER, Dieter; DE
Agent:
STAUDACHER, Wolfgang; DE
Priority Data:
10 2018 210 286.425.06.2018DE
Title (DE) VERFAHREN UND VORRICHTUNG ZUM ZIEHEN EINES EINKRISTALLS AUS HALBLEITERMATERIAL UND HALBLEITERSCHEIBE AUS SILIZIUM
(EN) METHOD AND DEVICE FOR DRAWING A SINGLE CRYSTAL OF SEMICONDUCTOR MATERIAL, AND SEMICONDUCTOR WAFER OF SILICON
(FR) PROCÉDÉ ET DISPOSITIF DE TIRAGE D’UN MONOCRISTAL À PARTIR D’UN MATÉRIAU SEMI-CONDUCTEUR ET PLAQUETTE SEMI-CONDUCTRICE EN SILICIUM
Abstract:
(DE) Die Erfindung betrifft ein Verfahren zum Ziehen eines Einkristalls (150) unter Verwendung einer Vorrichtung (100) mit einem Tiegel, die zum Ziehen des Einkristalls (150) aus einer Schmelze in dem Tiegel (130) dient, wobei als Tiegel (130) ein Tiegel verwendet wird, der wenigstens teilweise aus einem Nitrid des Halbleitermaterials besteht, und wobei in der Vorrichtung (100) ein Partialdruck für Stickstoff auf einen Wert von wenigstens 0,1 mbar eingestellt oder eingeregelt wird, und/oder wobei auf Höhe des Tiegels (130) eine den Tiegel umgebende, insbesondere ringförmige, Kühlplatte (121) vorgesehen wird, die in thermischem Kontakt mit einer die Kühlplatte (121) und den Tiegel (130) umgebenden Kühlvorrichtung (120) steht, und/oder wobei auf einer der Schmelze zugewandten Oberfläche (131) des Tiegels Kristallnadeln (156) aus dem Nitrid des Halbleitermaterials gebildet werden, und/oder wobei mittels einer Heizvorrichtung (135) das feste und zu schmelzende Halbleitermaterial (153) von oben und/oder der Tiegel (130) von unten jeweils wenigstens teilweise durch mittels der Heizvorrichtung erzeugter Wärmestrahlung (W) direkt erwärmt werden, sowie eine solche Vorrichtung (100).
(EN) The invention relates to a method for drawing a single crystal (150) using a device (100) having a crucible, which device is used to draw the single crystal (150) from a melt in the crucible (130), wherein: a crucible consisting at least partially of a nitride of the semiconductor material is used as the crucible (130), and a partial pressure for nitrogen is set or adjusted to a value of at least 0.1 mbar in the device (100), and/or a cooling plate (121), which surrounds the crucible and in particular is annular, is provided at the height of the crucible (130), which cooling plate is in thermal contact with a cooling device (120), which surrounds the cooling plate (121) and the crucible (130), and/or on a surface (131) of the crucible facing the melt, crystal needles (156) are formed from the nitride of the semiconductor material, and/or by means of a heating device (135), the solid semiconductor material (153) to be heated is directly heated from above and/or the crucible (130) is directly heated from below, in each case at least partially by thermal radiation (W) produced by means of the heating device. The invention further relates to a device (100) of this type.
(FR) L’invention concerne un procédé de tirage d’un monocristal (150) au moyen d’un dispositif (100) comportant un creuset qui sert au tirage du monocristal (150) à partir d’une masse fondue présente dans le creuset (130), le creuset (130) utilisé étant un creuset qui est composé au moins en partie d’un nitrure du matériau semi-conducteur. Dans le dispositif (100), une pression partielle de l’oxygène est ajustée et/ou régulée à une valeur d’au moins 0,1 mbar, et/ou une plaque de refroidissement (121), en particulier annulaire, entourant le creuset, est agencée à hauteur du creuset (130) et est en contact thermique avec un dispositif de refroidissement (120) entourant la plaque de refroidissement (121) et le creuset (130), et/ou des aiguilles de cristal (156) composées du nitrure du matériau semi-conducteur sont formées sur la surface (131) du creuset tournée vers la masse fondue, et/ou le rayonnement thermique (W) produit par un dispositif de chauffage (135) chauffe directement au moins en partie respectivement le matériau semi-conducteur solide et à fondre (153) par le haut et/ou le creuset (130) par le bas. L’invention concerne également ledit dispositif (100).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)