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1. WO2020000602 - SEMICONDUCTOR SYNTHESIS APPARATUS AND SYNTHESIS METHOD

Publication Number WO/2020/000602
Publication Date 02.01.2020
International Application No. PCT/CN2018/101452
International Filing Date 21.08.2018
IPC
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
11
Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. Bridgman- Stockbarger method
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
40
AIIIBV compounds
42
Gallium arsenide
C30B 23/00 (2006.01)
C30B 11/00 (2006.01)
C30B 29/42 (2006.01)
CPC
C30B 11/002
C30B 11/003
C30B 11/006
C30B 28/06
C30B 29/42
C30B 29/48
Applicants
  • 汉能新材料科技有限公司 HANERGY NEW MATERIAL TECHNOLOGY CO., LTD. [CN/CN]; 中国北京市 怀柔区雁栖工业开发区五区36号 No. 36, Area 5 Yanqi Industrial Development Zone, Huairou District Beijing 101407, CN
Inventors
  • 雷仁贵 LEI, Rengui; CN
  • 肖亚东 XIAO, Yadong; CN
  • 谈笑天 TAN, Xiaotian; CN
Agents
  • 北京天昊联合知识产权代理有限公司 TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS; 中国北京市 建国门内大街28号民生金融中心D座10层顾红霞 GU, Hongxia 10th Floor, Tower D, Minsheng Financial Center 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data
201810698427.129.06.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR SYNTHESIS APPARATUS AND SYNTHESIS METHOD
(FR) APPAREIL DE SYNTHÈSE DE SEMI-CONDUCTEURS ET PROCÉDÉ DE SYNTHÈSE ASSOCIÉ
(ZH) 一种半导体合成装置和合成方法
Abstract
(EN)
Disclosed is a semiconductor synthesis apparatus, comprising a closed reaction tube (4), a first furnace body (1) and a second furnace body (2), wherein the reaction tube (4) is provided with multiple horizontal boat containers. The multiple horizontal boat containers comprise multiple first-layer horizontal boat containers (11), a support device (13) being arranged on at least one of the first-layer horizontal boat containers (11), a second-layer horizontal boat container (12) being superposed on the support device (13), and the support device (13) being configured to support the second-layer horizontal boat container (12) and provide a gap between the first-layer horizontal boat container (11) and the second-layer horizontal boat container (12).
(FR)
L'invention concerne un appareil de synthèse de semi-conducteurs. Ledit appareil comprend un tube de réaction fermé (4), un premier corps de four (1) et un second corps de four (2). Le tube de réaction (4) est pourvu de multiples cuves à nacelle horizontale. Les multiples cuves à nacelle horizontale contiennent de multiples récipients à nacelle horizontale de première couche (11). Un dispositif de support (13) est situé sur au moins un des récipients à nacelle horizontale de première couche (11). Un récipient à nacelle horizontale de seconde couche (12) est superposé sur le dispositif de support (13). Le dispositif de support (13) est conçu pour supporter le récipient à nacelle horizontale de seconde couche (12) et pour définir un espace entre le récipient à nacelle horizontale de première couche (11) et le récipient à nacelle horizontale de seconde couche (12).
(ZH)
一种半导体合成装置,包括密闭反应管(4)、第一炉体(1)和第二炉体(2),反应管(4)布置有多个水平舟容器,多个水平舟容器包括多个第一层水平舟容器(11),在第一层水平舟容器(11)的至少一个上设置有支架装置(13),在支架装置(13)上叠置一第二层水平舟容器(12),支架装置(13)设置为支撑所述第二层水平舟容器(12),并在第一层水平舟容器(11)和第二层水平舟容器(12)之间提供间隙。
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