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1. WO2020000435 - INTEGRATED CIRCUIT AND INTERCONNECTION STRUCTURE THEREOF

Publication Number WO/2020/000435
Publication Date 02.01.2020
International Application No. PCT/CN2018/093839
International Filing Date 29.06.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60
Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 21/60 (2006.01)
CPC
H01L 21/486
H01L 23/498
H01L 23/522
H01L 23/562
Applicants
  • 华为技术有限公司 HUAWEI TECHNOLOGIES CO., LTD. [CN/CN]; 中国广东省深圳市 龙岗区坂田华为总部办公楼 Huawei Administration Building, Bantian, Longgang District Shenzhen, Guangdong 518129, CN
Inventors
  • 杨雯 YANG, Wen; CN
  • 刘燕翔 LIU, Yanxiang; CN
  • 曾秋玲 ZENG, Qiuling; CN
  • 陈赞锋 CHEN, Zanfeng; CN
  • 夏禹 XIA, Yu; CN
Agents
  • 广州三环专利商标代理有限公司 SCIHEAD IP LAW FIRM; 中国广东省广州市 越秀区先烈中路80号汇华商贸大厦1508室 Room 1508, Huihua Commercial & Trade Building No. 80, XianLie Zhong Road, Yuexiu District Guangzhou, Guangdong 510070, CN
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) INTEGRATED CIRCUIT AND INTERCONNECTION STRUCTURE THEREOF
(FR) CIRCUIT INTÉGRÉ ET SA STRUCTURE D'INTERCONNEXION
(ZH) 集成电路及其互连结构
Abstract
(EN)
The present application provides an integrated circuit and an interconnection structure thereof. The interconnection structure of the integrated circuit comprises an inner connection line structure, a first reinforcement structure, a second reinforcement structure, and a third reinforcement structure; the first reinforcement structure, the second reinforcement structure, and the third reinforcement structure are used for enhancing the mechanical strength and reliability of the interconnection structure of the integrated circuit, so as to avoid generation and extension of cracks in an insulating medium of the interconnection structure of the integrated circuit, thereby ensuring the quality of the interconnection structure of the integrated circuit as well as the quality of the integrated circuit.
(FR)
La présente invention concerne un circuit intégré et sa structure d'interconnexion. La structure d'interconnexion du circuit intégré comprend une structure de ligne de connexion interne, et des première à troisième structures de renforcement. Les première à troisième structures de renforcement servent à améliorer la résistance mécanique et la fiabilité de la structure d'interconnexion du circuit intégré, de manière à éviter la génération et l'extension de fissures dans un milieu isolant de la structure d'interconnexion du circuit intégré, assurant ainsi la qualité de la structure d'interconnexion du circuit intégré ainsi que la qualité du circuit intégré.
(ZH)
本申请提供一种集成电路及其互连结构,所述集成电路互连结构包括内连线结构、第一增强结构、第二增强结构及第三增强结构。其中,第一增强结构、第二增强结构及第三增强结构用于增强所述集成电路互连结构的机械强度及可靠性,避免所述集成电路互连结构的绝缘介质中裂纹的产生及延伸,以保证所述集成电路互连结构的品质,进而也保证所述集成电路的品质。
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