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1. WO2020000392 - THREE-DIMENSIONAL MEMORY DEVICES WITH STACKED DEVICE CHIPS USING INTERPOSERS

Publication Number WO/2020/000392
Publication Date 02.01.2020
International Application No. PCT/CN2018/093738
International Filing Date 29.06.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
H01L 27/115 (2017.01)
CPC
H01L 21/4857
H01L 21/486
H01L 2224/16227
H01L 2225/1058
H01L 2225/107
H01L 23/481
Applicants
  • YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN/CN]; Room 7018, No.18, Huaguang Road, Guandong Science and Technology Industrial Park East Lake Development Zone Wuhan, Hubei 430074, CN
Inventors
  • LIU, Jun; CN
  • XIAO, Lihong; CN
Agents
  • NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.; 10th Floor, Tower C, Beijing Global Trade Center 36 North Third Ring Road East, Dongcheng District Beijing 100013, CN
Priority Data
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THREE-DIMENSIONAL MEMORY DEVICES WITH STACKED DEVICE CHIPS USING INTERPOSERS
(FR) DISPOSITIFS DE TYPE MÉMOIRES TRIDIMENSIONNELLES À PUCES DE DISPOSITIF EMPILÉES UTILISANT DES INTERPOSEURS
Abstract
(EN)
Embodiments of three-dimensional (3D) memory devices with stacked device chips using interposers and fabrication methods thereof are disclosed. In an example, a 3D memory device includes first and second device chips and an interposer therebetween. The first device chip includes a peripheral device and a first chip contact on a surface of the first device chip and electrically connected to the peripheral device. The second device chip includes an alternating conductor/dielectric stack, a memory string extending vertically through the alternating conductor/dielectric stack, and a second chip contact on a surface of the second device chip and electrically connected to the memory string. The interposer includes an interposer substrate, first and second interposer contacts on opposite surfaces of the interposer and electrically connected to one another through the interposer substrate. The first and second interposer contacts are attached to the first and second chip contacts, respectively.
(FR)
Selon des modes de réalisation, la présente invention concerne des dispositifs de type mémoires tridimensionnelles (3D) à puces de dispositif empilées utilisant des interposeurs et leurs procédés de fabrication. Dans un exemple, un dispositif de type mémoire 3D comprend des première et seconde puces de dispositif et un interposeur entre elles. La première puce de dispositif comprend un dispositif périphérique et un premier contact de puce sur une surface de la première puce de dispositif et électriquement connecté au dispositif périphérique. La seconde puce de dispositif comprend un empilement conducteur/diélectrique alterné, une chaîne de mémoire s'étendant verticalement à travers l'empilement conducteur/diélectrique alterné et un second contact de puce sur une surface de la seconde puce de dispositif et électriquement connecté à la chaîne de mémoire. L'interposeur comprend un substrat d'interposeur, des premier et second contacts d'interposeur sur des surfaces opposées de l'interposeur et connectés électriquement l'un à l'autre par le substrat d'interposeur. Les premier et second contacts d'interposeur sont fixés au premier et au second contacts de puce, respectivement.
Latest bibliographic data on file with the International Bureau