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1. WO2020000378 - SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME

Publication Number WO/2020/000378
Publication Date 02.01.2020
International Application No. PCT/CN2018/093692
International Filing Date 29.06.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H01L 21/02 (2006.01)
H01L 21/768 (2006.01)
CPC
H01L 2224/335
H01L 24/03
H01L 24/09
H01L 24/27
H01L 24/33
H01L 24/83
Applicants
  • 长江存储科技有限责任公司 YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN/CN]; 中国湖北省武汉市 东湖开发区关东科技工业园华光大道18号7018室 Room 7018 No.18, Huaguang Road, Guandong Science and Technology Industrial Park, East Lake High-Tech Development Zone Wuhan, Hubei 430074, CN
Inventors
  • 陈俊 CHEN, Jun; CN
  • 华子群 HUA, Ziqun; CN
  • 胡思平 HU, Siping; CN
  • 王家文 WANG, Jiawen; CN
  • 王涛 WANG, Tao; CN
  • 朱继锋 ZHU, Jifeng; CN
  • 丁滔滔 DING, Taotao; CN
  • 王新胜 WANG, Xinsheng; CN
  • 朱宏斌 ZHU, Hongbin; CN
  • 程卫华 CHENG, Weihua; CN
  • 杨士宁 YANG, Shining; CN
Agents
  • 上海盈盛知识产权代理事务所(普通合伙) SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY; 中国上海市 闸北区梅园路228号企业广场12楼1216室 Room 1216, 12/F Enterprise Square, 228 Meiyuan Road, Zhabei District Shanghai 200070, CN
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
(FR) STRUCTURE SEMI-CONDUCTRICE ET SON PROCÉDÉ DE FORMATION
(ZH) 半导体结构及其形成方法
Abstract
(EN)
The present invention relates to a semiconductor structure and a method for forming same. The semiconductor structure comprises: a first substrate; and a first adhesive/bonded stack on a surface of the first substrate, wherein the first adhesive/bonded stack comprises at least one first adhesive layer and at least one first bonded layer; the first adhesive layer and the first bonded layer are respectively made of different materials; and the material of the first bonded layer is a dielectric material comprising Si, N and C, and the material of the first adhesive layer is a dielectric material comprising Si and N. The first adhesive/bonded stack of the semiconductor structure can have a great bonding force during bonding.
(FR)
La présente invention concerne une structure semi-conductrice et son procédé de formation. La structure semi-conductrice comprend : un premier substrat ; et un premier empilement adhésif/collé sur une surface du premier substrat, le premier empilement adhésive/collé comprenant au moins une première couche adhésive et au moins une première couche collée ; la première couche adhésive et la première couche collée étant respectivement constituées de matériaux différents ; et le matériau de la première couche collée est un matériau diélectrique comprenant du Si, N et C, et le matériau de la première couche adhésive est un matériau diélectrique comprenant du Si et N. Le premier empilement adhésif/collé de la structure semi-conductrice peut avoir une grande force de collage pendant le collage.
(ZH)
本发明涉及一种半导体结构及其形成方法,所述半导体结构包括:第一基底;在所述第一基底表面上的第一粘附/键合叠层,所述第一粘附/键合叠层包括至少一层第一粘附层和至少一层第一键合层,所述第一粘附层和第一键合层分别采用不同的材料,所述第一键合层的材料为包括Si、N和C的介质材料,所述第一粘附层的材料为包括Si和N的介质材料。所述半导体结构的第一粘附/键合叠层在键合时能够具有较高的键合力。
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