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1. WO2019243882 - SEMICONDUCTOR STRUCTURE ENHANCED FOR HIGH VOLTAGE APPLICATIONS

Publication Number WO/2019/243882
Publication Date 26.12.2019
International Application No. PCT/IB2019/000515
International Filing Date 19.06.2019
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92
Capacitors with potential-jump barrier or surface barrier
94
Metal-insulator-semiconductors, e.g. MOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Thin-film or thick-film devices
H01L 27/02 (2006.01)
H01L 29/94 (2006.01)
H01L 49/02 (2006.01)
CPC
H01L 27/0207
H01L 28/90
H01L 29/94
Applicants
  • MURATA MANUFACTURING CO., LTD. [JP/JP]; 10-1, Higashikotari 1-chome, Nagaokakyo-shi Kyoto 617-8555, JP
Inventors
  • VOIRON, Frédéric; FR
  • BUFFLE, Larry; FR
Priority Data
18305789.221.06.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE ENHANCED FOR HIGH VOLTAGE APPLICATIONS
(FR) STRUCTURE SEMI-CONDUCTRICE AMÉLIORÉE POUR DES APPLICATIONS HAUTE TENSION
Abstract
(EN)
A semiconductor structure enhanced for high-voltage applications is disclosed. The structure comprises a protruding wall structure, formed by etching a substrate, that extends from a base surface of the substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electrical stress within the structure. The protruding wall structure may be partitioned into multiple wall regions disposed along different directions of the substrate to reduce mechanical stress.
(FR)
L'invention concerne une structure semi-conductrice améliorée pour des applications à haute tension. La structure comprend une structure de paroi en saillie, formée par gravure d'un substrat, qui s'étend à partir d'une surface de base du substrat. Les coins de la structure de paroi en saillie peuvent être lisses ou arrondis pour réduire la contrainte électrique à l'intérieur de la structure. La structure de paroi en saillie peut être divisée en de multiples régions de paroi disposées le long de différentes directions du substrat pour réduire une contrainte mécanique.
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