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1. WO2019227956 - WIRELESS TRANSMISSION MODULE AND FABRICATION METHOD THEREFOR

Publication Number WO/2019/227956
Publication Date 05.12.2019
International Application No. PCT/CN2019/073318
International Filing Date 28.01.2019
IPC
H04B 1/40 2015.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
BTRANSMISSION
1Details of transmission systems, not covered by a single one of groups H04B3/-H04B13/123; Details of transmission systems not characterised by the medium used for transmission
38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
40Circuits
CPC
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 2223/6677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2223Details relating to semiconductor or other solid state devices covered by the group H01L23/00
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
66High-frequency adaptations
6661for passive devices
6677for antenna, e.g. antenna included within housing of semiconductor device
H01L 2224/04105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
04105Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
H01L 2224/24011
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
2401Structure
24011Deposited, e.g. MCM-D type
H01L 2224/24101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
241Disposition
24101Connecting bonding areas at the same height
H01L 2224/24137
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
18High density interconnect [HDI] connectors; Manufacturing methods related thereto
23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
24of an individual high density interconnect connector
241Disposition
24135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
24137the bodies being arranged next to each other, e.g. on a common substrate
Applicants
  • 华为技术有限公司 HUAWEI TECHNOLOGIES CO., LTD. [CN]/[CN]
Inventors
  • 何气敬 HE, Qijing
  • 廖小景 LIAO, Xiaojing
  • 侯召政 HOU, Zhaozheng
Agents
  • 深圳市深佳知识产权代理事务所(普通合伙) SHENPAT INTELLECTUAL PROPERTY AGENCY
Priority Data
201810559223.X01.06.2018CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) WIRELESS TRANSMISSION MODULE AND FABRICATION METHOD THEREFOR
(FR) MODULE DE TRANSMISSION SANS FIL ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种无线传输模组及制造方法
Abstract
(EN) Disclosed by the present application are a wireless transmission module and a fabrication method therefor. The wireless transmission module has an integrated structure formed by a chip, a passive component and a coil, so that the integration level of the wireless transmission module is improved. Moreover, the independence of the module may be achieved effectively by using the integrated structure; flexible layout inside the entirety of an electronic device is implemented by using the independent module; and because only an input terminal of the wireless transmission module needs to be kept on the main board of the electronic device instead of needing to arrange the independent module on the main board of the electronic device, the area of the board occupied by the wireless transmission module is reduced. Furthermore, the present integrated structure may effectively enhance the continuous normal working capabilities of a product in an extremely poor quality scenario and improve the reliability of the product. In addition, the chip and the coil are integrated into one in the wireless transmission module structure, and the signal transmission path between the chip and the coil is thus relatively short, so that the generated parasitic impedance is relatively small.
(FR) La présente invention concerne un module de transmission sans fil et son procédé de fabrication. Le module de transmission sans fil a une structure intégrée formée par une puce, un composant passif et une bobine, de telle sorte que le niveau d'intégration du module de transmission sans fil est amélioré. De plus, l'indépendance du module peut être obtenue efficacement en utilisant la structure intégrée; une disposition flexible à l'intérieur de la totalité d'un dispositif électronique est mise en œuvre en utilisant le module indépendant; et étant donné qu'une seule borne d'entrée du module de transmission sans fil doit être maintenue sur la carte principale du dispositif électronique au lieu d'avoir besoin d'agencer le module indépendant sur la carte principale du dispositif électronique, la zone de la carte occupée par le module de transmission sans fil est réduite. En outre, la présente structure intégrée peut améliorer efficacement les capacités de fonctionnement normales continues d'un produit dans un scénario de qualité extrêmement faible et améliorer la fiabilité du produit. De plus, la puce et la bobine sont intégrées en une seule dans la structure de module de transmission sans fil, et le trajet de transmission de signal entre la puce et la bobine est ainsi relativement court, de telle sorte que l'impédance parasite générée est relativement petite.
(ZH) 本申请公开了一种无线传输模组及其制造方法,该模组将芯片、被动元器件以及线圈集成为一体结构,提高了无线传输模组的集成度。而且,该一体结构可以有效实现模组的独立化,该独立模组可以实现灵活地布局在电子设备的整机内部,而且无需将该独立模组设置在电子设备的主板上,仅需要在电子设备的主板上保留无线传输模组的输入端子,因此,该无线传输模组的占板面积较小。而且,该一体结构还可以有效提升产品在极端恶劣场景下持续正常工作能力,提高产品的可靠性。此外,该无线传输模组结构中,芯片和线圈集成于一体,芯片和线圈之间的信号传输路径较短,因而,其产生的寄生阻抗较小。
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