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1. WO2019225160 - SPIN ACCUMULATION DEVICE

Publication Number WO/2019/225160
Publication Date 28.11.2019
International Application No. PCT/JP2019/014416
International Filing Date 01.04.2019
IPC
H01L 21/8239 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
H01L 27/105 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
82controllable by variation of the magnetic field applied to the device
CPC
H01L 21/8239
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology ; , i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
8239Memory structures
H01L 27/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 29/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
82controllable by variation of the magnetic field applied to the device
Applicants
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
Inventors
  • 富永 淳二 TOMINAGA Junji
  • 宮田 典幸 MIYATA Noriyuki
Agents
  • 塩田 伸 SHIODA Shin
Priority Data
2018-09853523.05.2018JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SPIN ACCUMULATION DEVICE
(FR) DISPOSITIF D'ACCUMULATION DE SPIN
(JA) スピン蓄積装置
Abstract
(EN) [Problem] The present invention addresses the problem of providing a spin accumulation device for which the accumulation characteristics and supply characteristics of spin electrons are excellent, and which can operate at room temperature. [Solution] A spin accumulation device 1 is characterized by including: a substrate 2; a superlattice layer 4 which is disposed on the substrate and in which alternatingly and repeatedly layered are a topological insulation layer 4a having topological insulation properties, and an electrical insulation layer 4b having electrical insulation properties; and a magnetic electrode 5 which is disposed on the superlattice layer 4 and which has a linear section 5a that bridges points on the outer edge 2 of the surface of the superlattice layer 4.
(FR) Le problème décrit par la présente invention est de fournir un dispositif d'accumulation de spin pour lequel les caractéristiques d'accumulation et les caractéristiques d'alimentation des électrons de spin sont excellentes, et qui peuvent fonctionner à température ambiante. La solution selon l'invention porte sur un dispositif d'accumulation de spin 1 qui est caractérisé en ce qu'il comprend : un substrat 2 ; une couche de super-réseau 4 qui est disposée sur le substrat et dans laquelle des couches alternées et répétées sont une couche d'isolation topologique 4a ayant des propriétés d'isolation topologique, et une couche d'isolation électrique 4b ayant des propriétés d'isolation électrique ; et une électrode magnétique 5 qui est disposée sur la couche de super-réseau 4 et qui a une section linéaire 5a qui relie des points sur le bord externe 2 de la surface de la couche de super-réseau 4.
(JA) 【課題】本発明は、スピン電子の蓄積特性及び供給特性に優れ、室温で動作可能なスピン蓄積装置を提供することを課題とする。 【解決手段】スピン蓄積装置1は、基板2と、基板2上に配され、トポロジカル絶縁性を示すトポロジカル絶縁層4aと電気絶縁性を示す電気絶縁層4bとが交互に繰返し積層される超格子層4と、超格子層4上に配されるとともに超格子層4表面の外縁2点間に架け渡される線状部5aを有する磁性電極5と、を有することを特徴とする。
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