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1. WO2019224936 - SOLID-STATE IMAGE CAPTURE DEVICE AND IMAGE CAPTURE DEVICE

Publication Number WO/2019/224936
Publication Date 28.11.2019
International Application No. PCT/JP2018/019823
International Filing Date 23.05.2018
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369 2011.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors
369SSIS architecture; Circuitry associated therewith
H04N 9/07 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
CPC
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H04N 5/369
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
5Details of television systems
30Transforming light or analogous information into electric information
335using solid-state image sensors [SSIS]
369SSIS architecture; Circuitry associated therewith
H04N 9/07
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
Applicants
  • オリンパス株式会社 OLYMPUS CORPORATION [JP]/[JP]
Inventors
  • 小山 友作 KOYAMA Yusaku
Agents
  • 棚井 澄雄 TANAI Sumio
  • 鈴木 三義 SUZUKI Mitsuyoshi
  • 高柴 忠夫 TAKASHIBA Tadao
  • 鈴木 史朗 SUZUKI Shirou
Priority Data
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SOLID-STATE IMAGE CAPTURE DEVICE AND IMAGE CAPTURE DEVICE
(FR) DISPOSITIF DE CAPTURE D'IMAGE À SEMI-CONDUCTEURS ET DISPOSITIF DE CAPTURE D'IMAGE
(JA) 固体撮像装置および撮像装置
Abstract
(EN) A solid-state image capture device formed from a semiconductor substrate having a first surface for forming an element and a second surface which opposes the first surface and on which light is incident is provided with: a plurality of pixels which are formed in a 2-dimensional matrix on the first surface, and include a photoelectric conversion element for generating a signal charge corresponding to the amount of incident light; a first substrate electrode for applying a first reference potential to the first surface side of the pixels; and a second substrate electrode for applying a second reference potential to the second surface side of the pixels.
(FR) L'invention concerne un dispositif de capture d'image à semi-conducteurs formé à partir d'un substrat semi-conducteur comportant une première surface servant à former un élément et une seconde surface opposée à la première surface et sur laquelle est incidente de la lumière, comprenant : une pluralité de pixels formés dans une matrice bidimensionnelle sur la première surface, et comprenant un élément de conversion photoélectrique destiné à générer une charge de signal correspondant à la quantité de lumière incidente ; une première électrode de substrat permettant d'appliquer un premier potentiel de référence au premier côté de surface des pixels ; et une seconde électrode de substrat permettant d'appliquer un second potentiel de référence au second côté de surface des pixels.
(JA) 素子を形成する第1の面と、第1の面と対向し、光が入射する第2の面とを有する半導体基板から形成された固体撮像装置であって、第1の面に2次元の行列状に形成され、入射した光の量に応じた信号電荷を発生する光電変換素子を含む複数の画素と、画素の第1の面側に第1の基準電位を印加するための第1の基板電極と、画素の第2の面側に第2の基準電位を印加するための第2の基板電極と、を備える。
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