WO2019220796 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

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Publication Number WO/2019/220796

Publication Date 21.11.2019

International Application No. PCT/JP2019/014439

International Filing Date 01.04.2019

IPC

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Applicants

ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP]/[JP]

Inventors

塚本　雅則 TSUKAMOTO, Masanori

Agents

特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE

Priority Data

2018-092986

14.05.2018

Publication Language Japanese (ja)

Filing Language Japanese (JA)

Designated States

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Title

(EN) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

(FR) DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTRONIQUE

(JA) 半導体装置及び電子機器

Abstract

(EN) [Problem] To provide a non-volatile semiconductor memory which is capable of writing or reading at high speed and is suitable for integration at high density. [Solution] The semiconductor device comprises: a first inverter circuit that includes an n-type FET and a p-type FET; a second inverter circuit that includes an n-type FET and a p-type FET, has an output connected to an input of the first inverter circuit, and has an input connected to an output of the first inverter circuit; a first ferroelectric capacitor having one electrode connected to the input of the first inverter circuit; a second ferroelectric capacitor having one electrode connected to the input of the second inverter circuit; and a plate line that connects with the other electrode of the first ferroelectric capacitor and the other electrode of the second ferroelectric capacitor.

(FR) Le problème décrit par la présente invention est de fournir une mémoire semi-conductrice non volatile qui est capable d'écrire ou de lire à grande vitesse et qui est appropriée pour une intégration à haute densité. La solution selon l'invention porte sur un dispositif à semi-conducteur qui comprend : un premier circuit inverseur qui comprend un FET de type n et un FET de type P ; un second circuit inverseur qui comprend un FET de type n et un FET de type p, a une sortie connectée à une entrée du premier circuit inverseur, et a une entrée connectée à une sortie du premier circuit inverseur ; un premier condensateur ferroélectrique ayant une électrode connectée à l'entrée du premier circuit inverseur ; un second condensateur ferroélectrique ayant une électrode connectée à l'entrée du second circuit inverseur ; et une ligne de plaque qui se connecte à l'autre électrode du premier condensateur ferroélectrique et à l'autre électrode du second condensateur ferroélectrique.

(JA) 【課題】高速での書き込み又は読み出しが可能であり、かつ高密度での集積化に適した不揮発の半導体メモリを提供する。【解決手段】ｎ型ＦＥＴ及びｐ型ＦＥＴを含む第１反転回路と、ｎ型ＦＥＴ及びｐ型ＦＥＴを含み、前記第１反転回路の入力に出力が接続され、前記第１反転回路の出力に入力が接続された第２反転回路と、電極の一方を前記第１反転回路の入力に接続された第１強誘電体キャパシタと、電極の一方を前記第２反転回路の入力に接続された第２強誘電体キャパシタと、前記第１強誘電体キャパシタの電極の他方、及び前記第２強誘電体キャパシタの電極の他方と接続するプレート線と、を備える、半導体装置。

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78	with subsequent division of the substrate into plural individual devices
82	to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822	the substrate being a semiconductor, using silicon technology
8232	Field-effect technology
8234	MIS technology
8239	Memory structures

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
11	Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21	using electric elements
22	using ferroelectric elements

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
11	Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21	using electric elements
34	using semiconductor devices
40	using transistors
41	forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
412	using field-effect transistors only

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78	with subsequent division of the substrate into plural individual devices
82	to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822	the substrate being a semiconductor, using silicon technology
8222	Bipolar technology
8229	Memory structures

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27	Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02	including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04	the substrate being a semiconductor body
10	including a plurality of individual components in a repetitive configuration
102	including bipolar components

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1. WO2019220796 - SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
7	Arrangements for writing information into, or reading information out from, a digital store
18	Bit line organisation; Bit line lay-out

G	PHYSICS
11	INFORMATION STORAGE
C	STATIC STORES
7	Arrangements for writing information into, or reading information out from, a digital store
18	Bit line organisation; Bit line lay-out