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1. WO2019220712 - POLISHING HEAD, WAFER POLISHING DEVICE USING SAME, AND POLISHING METHOD

Publication Number WO/2019/220712
Publication Date 21.11.2019
International Application No. PCT/JP2019/004972
International Filing Date 13.02.2019
IPC
H01L 21/304 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
B24B 37/30 2012.1
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 37/32 2012.1
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
CPC
B24B 37/107
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
10for single side lapping
105the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
107in a rotary movement only, about an axis being stationary during lapping
B24B 37/30
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
B24B 37/32
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
37Lapping machines or devices; Accessories
27Work carriers
30for single side lapping of plane surfaces
32Retaining rings
B24B 57/02
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
57Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
02for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
B24B 7/228
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
7Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
20characterised by a special design with respect to properties of the material of non-metallic articles to be ground
22for grinding inorganic material, e.g. stone, ceramics, porcelain
228for grinding thin, brittle parts, e.g. semiconductors, wafers
H01L 21/67092
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67092Apparatus for mechanical treatment
Applicants
  • 株式会社SUMCO SUMCO CORPORATION [JP]/[JP]
Inventors
  • 中野 裕生 NAKANO Yuki
  • 杉森 勝久 SUGIMORI Katsuhisa
  • 小佐々 和明 KOZASA Kazuaki
  • 梶原 治郎 KAJIWARA Jiro
  • 山本 勝利 YAMAMOTO Katsutoshi
  • 木原 誉之 KIHARA Takayuki
  • 寺川 良也 TERAKAWA Ryoya
Agents
  • 鷲頭 光宏 WASHIZU Mitsuhiro
  • 緒方 和文 OGATA Kazufumi
Priority Data
2018-09530017.05.2018JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) POLISHING HEAD, WAFER POLISHING DEVICE USING SAME, AND POLISHING METHOD
(FR) TÊTE DE POLISSAGE, DISPOSITIF DE POLISSAGE DE TRANCHE L'UTILISANT, ET PROCÉDÉ DE POLISSAGE
(JA) 研磨ヘッド及びこれを用いたウェーハ研磨装置及び研磨方法
Abstract
(EN) [Problem] To suppress fluctuations in polishing pressure at an outer circumferential section of a wafer, and increase flatness. [Solution] A polishing head 10 of a wafer polishing device is provided with: a membrane head 16 that can independently control a center section control pressure Pc pressing a center section of a wafer W, and an outer circumferential section control pressure Pe pressing an outer circumferential section of the wafer W; an outer ring 17 integrated with the membrane head 16 so as to configure the outer circumferential section of the membrane head 16; and a grounding type retainer ring 14 provided at an outer side of the membrane head 16. The membrane head 16 has a center section pressure chamber R1 of a single chamber structure that controls the center section control pressure Pc, and an outer circumferential section pressure chamber R2 that is provided above the center section pressure chamber R1, and that controls the outer circumferential section control pressure Pe. The position of a lower end of the outer ring 17 reaches at least a position of an inside bottom surface S1 of the center section pressure chamber R1, and the position of an upper end of the outer ring 17 reaches at least a position of an inside upper surface S2 of the center section pressure chamber R1.
(FR) Le problème décrit par la présente invention est de supprimer les fluctuations de la pression de polissage au niveau d'une section circonférentielle externe d'une tranche, et d'augmenter la planéité. La solution selon l'invention porte sur une tête de polissage 10 d'un dispositif de polissage de tranche qui comporte : une tête de membrane 16 qui peut commander indépendamment une pression de commande de section centrale Pc pressant une section centrale d'une tranche W, et une pression de commande de section circonférentielle externe Pe pressant une section circonférentielle externe de la tranche W ; une bague externe 17 intégrée à la tête de membrane 16 de manière à configurer la section circonférentielle externe de la tête de membrane 16 ; et une bague de retenue de type de mise à la terre 14 disposée sur un côté externe de la tête de membrane 16. La tête de membrane 16 a une chambre de pression de section centrale R1 d'une structure de chambre unique qui commande la pression de commande de section centrale Pc, et une chambre de pression de section circonférentielle externe R2 qui est disposée au-dessus de la chambre de pression de section centrale R1, et qui commande la pression de commande de section circonférentielle externe Pe. La position d'une extrémité inférieure de la bague externe 17 atteint au moins une position d'une surface inférieure interne S1 de la chambre de pression de section centrale R1, et la position d'une extrémité supérieure de la bague externe 17 atteint au moins une position d'une surface supérieure interne S2 de la chambre de pression de section centrale R1.
(JA) 【課題】ウェーハの外周部における研磨圧力のうねりを抑えて高平坦化を図る。 【解決手段】ウェーハ研磨装置の研磨ヘッド10は、ウェーハWの中心部を押圧する中心部制御圧力PcとウェーハWの外周部を押圧する外周部制御圧力Peとを独立に制御可能なメンブレンヘッド16と、メンブレンヘッド16の外周部を構成するように当該メンブレンヘッド16と一体化された外リング17と、メンブレンヘッド16の外側に設けられた接地型リテーナリング14とを備え、メンブレンヘッド16は、中心部制御圧力Pcを制御する単室構造の中心部圧力室R1と、中心部圧力室R1の上方に設けられ、外周部制御圧力Peを制御する外周部圧力室R2とを有し、外リング17の下端の位置は、少なくとも中心部圧力室R1の内側底面S1の位置に達しており、外リング17の上端の位置は、少なくとも中心部圧力室R1の内側上面S2の位置に達している。
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