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1. WO2019218822 - THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE

Publication Number WO/2019/218822
Publication Date 21.11.2019
International Application No. PCT/CN2019/082445
International Filing Date 12.04.2019
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
CPC
H01L 21/32139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32139using masks
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/1288
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
1288employing particular masking sequences or specially adapted masks, e.g. half-tone mask
H01L 27/3248
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes [OLED]
3241Matrix-type displays
3244Active matrix displays
3248Connection of the pixel electrode to the TFT
H01L 29/401
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
401Multistep manufacturing processes
H01L 29/41733
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
41725Source or drain electrodes for field effect devices
41733for thin film transistors with insulated gate
Applicants
  • 京东方科技集团股份有限公司 BOE TECHNOLOGY GROUP CO., LTD. [CN]/[CN]
  • 北京京东方显示技术有限公司 BEIJING BOE DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 李小龙 LI, Xiaolong
  • 白金超 BAI, Jinchao
  • 郭会斌 GUO, Huibin
  • 韩笑 HAN, Xiao
  • 宋勇志 SONG, Yongzhi
Agents
  • 中科专利商标代理有限责任公司 CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.
Priority Data
201810480065.918.05.2018CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE
(FR) TRANSISTOR À COUCHES MINCES ET SON PROCÉDÉ DE FABRICATION, SUBSTRAT DE RÉSEAU ET DISPOSITIF D'AFFICHAGE
(ZH) 薄膜晶体管及其制备方法、阵列基板、显示装置
Abstract
(EN) A thin-film transistor, comprising a source (5) and a drain (5'). Each of the source (5) and the drain (5') comprises a metal base (51) and a conducting layer (52) covering the metal base (51); the adherence between the conducting layer (52) and a photoresist material (6) is greater than the adherence between the metal base (51) and the photoresist material (6). Also provided are a manufacturing method for the thin-film transistor and an array substrate and a display device having the thin-film transistor.
(FR) La présente invention concerne un transistor à couches minces comprenant une source (5) et un drain (5'). Chacune de la source (5) et du drain (5') comprend une base métallique (51) et une couche conductrice (52) recouvrant la base métallique (51) ; l'adhérence entre la couche conductrice (52) et un matériau de résine photosensible (6) est supérieure à l'adhérence entre la base métallique (51) et le matériau de résine photosensible (6). L'invention concerne également un procédé de fabrication du transistor à couches minces et un dispositif d'affichage comprenant le transistor à couches minces.
(ZH) 一种薄膜晶体管,包括源极(5)和漏极(5'),所述源极(5)和所述漏极(5')中的每一个都包括金属基底(51)以及覆盖所述金属基底(51)的导电层(52),所述导电层(52)与光刻胶材料(6)之间的密着性大于所述金属基底(51)与所述光刻胶材料(6)之间的密着性。还提供了一种薄膜晶体管的制备方法以及具有所述薄膜晶体管的阵列基板和显示装置。
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