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1. WO2019218604 - METHOD FOR PREPARING DRIVE SUBSTRATE, AND DRIVE SUBSTRATE AND DISPLAY APPARATUS

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Publication Number WO/2019/218604
Publication Date 21.11.2019
International Application No. PCT/CN2018/113111
International Filing Date 31.10.2018
IPC
H01L 23/64 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
64Impedance arrangements
CPC
H01L 21/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
H01L 27/0629
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
06including a plurality of individual components in a non-repetitive configuration
0611integrated circuits having a two-dimensional layout of components without a common active region
0617comprising components of the field-effect type
0629in combination with diodes, or resistors, or capacitors
H01L 27/1214
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 27/1259
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
1214comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
1259Multistep manufacturing methods
H01L 28/40
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
Applicants
  • 昆山国显光电有限公司 KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD. [CN]/[CN]
Inventors
  • 刘欢 LIU, Huan
Agents
  • 广州华进联合专利商标代理有限公司 ADVANCE CHINA IP LAW OFFICE
Priority Data
201810457586.214.05.2018CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING DRIVE SUBSTRATE, AND DRIVE SUBSTRATE AND DISPLAY APPARATUS
(FR) PROCÉDÉ DE PRÉPARATION D'UN SUBSTRAT DE PILOTAGE AINSI QUE SUBSTRAT DE PILOTAGE ET APPAREIL D’AFFICHAGE
(ZH) 驱动基板的制备方法、驱动基板和显示装置
front page image
Abstract
(EN) Disclosed is a method for preparing a drive substrate. The method comprises: obtaining a first thickness value of a first dielectric layer based on a difference value between the load of all first storage capacitors in a special-shaped display drive region and the load of all second storage capacitors in a normal display drive region; providing a base, and depositing a first metal layer on a surface of the base; and controlling a film forming process parameter by means of a film thickness control model, and depositing the first dielectric layer and a second dielectric layer on a surface of the first metal layer such that the thickness of the first dielectric layer reaches the first thickness value, and the thickness of the second dielectric layer reaches a second thickness value, the first thickness value being less than the second thickness value. Further disclosed are a drive substrate and a display apparatus.
(FR) L'invention concerne un procédé de préparation d'un substrat de pilotage. Le procédé consiste à : obtenir une première valeur d'épaisseur d'une première couche diélectrique sur la base d'une valeur de différence entre la charge de tous les premiers condensateurs de stockage d'une région de pilotage d'affichage de forme spéciale et la charge de tous les seconds condensateurs de stockage d'une région de pilotage d'affichage normal ; utiliser une base, et déposer une première couche métallique sur une surface de la base ; et commander un paramètre de processus de formation de film au moyen d'un modèle de commande d'épaisseur de film, et déposer la première couche diélectrique et une seconde couche diélectrique sur une surface de la première couche métallique de sorte que l'épaisseur de la première couche diélectrique atteigne la première valeur d'épaisseur, et que l'épaisseur de la seconde couche diélectrique atteigne une seconde valeur d'épaisseur, la première valeur d'épaisseur étant inférieure à la seconde valeur d'épaisseur. L’invention concerne en outre un substrat de pilotage et un appareil d’affichage.
(ZH) 公开了一种本申请提供的驱动基板的制备方法，包括：基于异形显示驱动区的所有第一储存电容的负载和正常显示驱动区的所有第二储存电容的负载的差值，得到第一介质层的第一厚度值；提供基底，并在基底表面沉积第一金属层；通过膜厚控制模型，控制成膜工艺参数，在第一金属层表面沉积第一介质层和第二介质层，以使第一介质层的厚度达到第一厚度值，以使第二介质层的厚度达到第二厚度值，第一厚度值小于第二厚度值。还公开了驱动基板和显示装置。
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