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1. WO2019212576 - MICRON-SIZED LIGHT EMITTING DIODE DESIGNS

Publication Number WO/2019/212576
Publication Date 07.11.2019
International Application No. PCT/US2018/035480
International Filing Date 31.05.2018
IPC
H01L 27/15 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/40 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
H01L 33/00 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H01L 33/62 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/60 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
H01L 33/14 2010.1
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01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 33/0008
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01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0004Devices characterised by their operation
0008having p-n or hi-lo junctions
H01L 33/005
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01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
H01L 33/0083
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0083for devices with an active region comprising only II-VI compounds
H01L 33/0093
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0093Wafer bonding; Removal of the growth substrate
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Applicants
  • FACEBOOK TECHNOLOGIES, LLC [US]/[US]
Inventors
  • MASSOUBRE, David
  • LUTGEN, Stephen
Agents
  • THOMAS, Daniel, A.
  • MOON, William, A.
Priority Data
15/968,35901.05.2018US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) MICRON-SIZED LIGHT EMITTING DIODE DESIGNS
(FR) CONCEPTIONS DE DIODES ÉLECTROLUMINESCENTES DE TAILLE MICROMÉTRIQUE
Abstract
(EN) A emitting diode (LED) includes an epitaxial structure defining a base and a mesa on the base. The base defines a light emitting surface of the LED and includes current spreading layer. The mesa includes a thick confinement layer, a light generation area on the thick confinement layer to emit light, a thin confinement layer on the light generation area, and a contact layer on the thin confinement layer, the contact layer defining a top of the mesa. A reflective contact is on the contact layer to reflect a portion of the light emitted from the light generation area, the reflected light being collimated at the mesa and directed through the base to the light emitting surface. In some embodiments, the epitaxial structure grown on a non-transparent substrate. The substrate is removed, or used to form an extended reflector to collimate light.
(FR) La présente invention concerne une diode électroluminescente (DEL) comprenant une structure épitaxiale définissant une base et une mesa sur la base. La base définit une surface d'émission de lumière de la DEL et comprend une couche d'étalement de courant. La mesa comprend une couche de confinement épaisse, une zone de génération de lumière sur la couche de confinement épaisse destinée à émettre de la lumière, une couche de confinement mince sur la zone de génération de lumière, et une couche de contact sur la couche de confinement mince, la couche de contact définissant une partie supérieure de la mesa. Un contact réfléchissant se trouve sur la couche de contact pour réfléchir une partie de la lumière émise à partir de la zone de génération de lumière, la lumière réfléchie étant collimatée au niveau de la mesa et dirigée à travers la base vers la surface d'émission de lumière. Dans certains modes de réalisation, la structure épitaxiale est développée sur un substrat non transparent. Le substrat est retiré, ou utilisé pour former un réflecteur étendu destiné à collimater la lumière.
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