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1. WO2019210647 - METHOD FOR PREPARING AVALANCHE PHOTODIODE

Publication Number WO/2019/210647
Publication Date 07.11.2019
International Application No. PCT/CN2018/110439
International Filing Date 16.10.2018
IPC
H01L 31/107 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/022416
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022416comprising ring electrodes
H01L 31/0312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0312including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
H01L 31/107
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
H01L 31/1075
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
107the potential barrier working in avalanche mode, e.g. avalanche photodiode
1075in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants
  • 中国电子科技集团公司第十三研究所 THE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION [CN]/[CN]
Inventors
  • 周幸叶 ZHOU, Xingye
  • 冯志红 FENG, Zhihong
  • 吕元杰 LV, Yuanjie
  • 谭鑫 TAN, Xin
  • 王元刚 WANG, Yuangang
  • 宋旭波 SONG, Xubo
  • 李佳 LI, Jia
  • 房玉龙 FANG, Yulong
Agents
  • 石家庄国为知识产权事务所 SHIJIAZHUANG GOWELL INTELLECTUAL PROPERTY LAW FIRM
Priority Data
201810421573.X04.05.2018CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD FOR PREPARING AVALANCHE PHOTODIODE
(FR) PROCÉDÉ DE PRÉPARATION D'UNE PHOTODIODE À AVALANCHE
(ZH) 雪崩光电二极管的制备方法
Abstract
(EN) A method for preparing an avalanche photodiode. The method comprises: preparing a mesa on a wafer (S101); growing a sacrificial layer on an upper surface of the wafer and a side surface of the mesa (S102); removing the sacrificial layer in an ohmic contact electrode region of the wafer (S103): preparing an ohmic contact electrode in the ohmic contact electrode region of the wafer from which the sacrificial layer in the ohmic contact electrode region has been removed (S104); removing the sacrificial layer in a non-mesa region of the wafer on which the ohmic contact electrode is prepared and on the side surface of the mesa, the non-mesa region being a region of the wafer outside of the mesa (S105); growing a passivation layer on the upper surface of the wafer and the side surface of the mesa from which the sacrificial layer in the non-mesa region and on the side surface of the mesa has been removed (S106); removing the passivation layer on the upper surface of the mesa of the wafer and the passivation layer in the non-mesa region of the wafer corresponding to the ohmic contact electrode region (S107); and removing the sacrificial layer on the upper surface of the mesa of the wafer (S108). The method for preparing an avalanche photodiode can protect a photosensitive surface of a device from damage, thereby reducing the leakage current and improving the quantum efficiency and responsiveness of the device.
(FR) L'invention concerne un procédé de préparation d'une photodiode à avalanche. Le procédé consiste : à préparer une mesa sur une tranche (S101); à faire croître une couche sacrificielle sur une surface supérieure de la tranche et une surface latérale de la mesa (S102); à retirer la couche sacrificielle dans une région d'électrode de contact ohmique de la tranche (S103); à préparer une électrode de contact ohmique dans la région d'électrode de contact ohmique de la tranche de laquelle la couche sacrificielle dans la région d'électrode de contact ohmique a été retirée (S104); à retirer la couche sacrificielle dans une région non-mesa de la tranche sur laquelle l'électrode de contact ohmique est préparée et sur la surface latérale de la mesa, la région non-mesa étant une région de la tranche à l'extérieur de la mesa (S105); à faire croître une couche de passivation sur la surface supérieure de la tranche et la surface latérale de la mesa de laquelle la couche sacrificielle dans la région non-mesa et sur la surface latérale de la mesa a été retirée (S106); à retirer la couche de passivation sur la surface supérieure de la mesa de la tranche et la couche de passivation dans la région non-mesa de la tranche correspondant à la région d'électrode de contact ohmique (S107); et à retirer la couche sacrificielle sur la surface supérieure de la mesa de la tranche (S108). Le procédé de préparation d'une photodiode à avalanche peut protéger une surface photosensible d'un dispositif contre des dommages, ce qui permet de réduire le courant de fuite et d'améliorer l'efficacité quantique et la réactivité du dispositif.
(ZH) 一种雪崩光电二极管的制备方法,该方法包括:在晶片上制备台面(S101);在晶片上表面和所述台面的侧面生长牺牲层(S102);去除所述晶片欧姆接触电极区的牺牲层(S103);在去除欧姆接触电极区牺牲层后的晶片的欧姆接触电极区制备欧姆接触电极(S104);去除制备欧姆接触电极后的晶片非台面区和台面的侧面的牺牲层,所述非台面区为所述晶片中除所述台面以外的剩余区域(S105);在去除非台面区和台面的侧面的牺牲层后的晶片上表面和台面的侧面生长钝化层(S106);去除所述晶片台面的上表面的钝化层和所述晶片非台面区与所述欧姆接触电极区对应区域的钝化层(S107);去除所述晶片台面的上表面的牺牲层(S108)。该雪崩光电二极管的制备方法能够保护器件的光敏面不受损伤,从而减小器件的漏电流,并提高器件的量子效率和响应度。
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