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1. WO2019208198 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Publication Number WO/2019/208198
Publication Date 31.10.2019
International Application No. PCT/JP2019/015436
International Filing Date 09.04.2019
IPC
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
Applicants
  • 株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP]/[JP]
Inventors
  • 水上 大乗 MIZUKAMI, Daijo
  • 石井 弘晃 ISHII, Hiroaki
Agents
  • 特許業務法人秀和特許事務所 IP FIRM SHUWA
Priority Data
2018-08688127.04.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract
(EN)
The present invention addresses the problem of preventing overflow of a processing liquid from a tank in a substrate processing device that reuses the processing liquid, even when the capacity of the tank is reduced. This substrate processing device performs predetermined processing on a substrate by discharging a processing liquid containing one or more kinds of chemicals and pure water. This substrate processing device is provide with: a storage tank that stores the processing liquid for performing the predetermined processing on the substrate; a substrate processing unit that performs the predetermined processing on the substrate by discharging onto the substrate the processing liquid supplied from the storage tank; a discharge amount acquisition device that acquires the discharge amount of the processing liquid discharged onto the substrate by the substrate processing unit; a recovery pipe for recovering the processing liquid discharged in the substrate processing unit to the substrate; and a processing liquid supply unit that supplements the processing liquid to the tank in a supplement amount determined on the basis of the discharge amount.
(FR)
La présente invention aborde le problème de prévention du débordement d'un liquide de traitement à partir d'un réservoir dans un dispositif de traitement de substrat qui réutilise le liquide de traitement, même lorsque la capacité du réservoir est réduite. Ce dispositif de traitement de substrat effectue un traitement prédéterminé sur un substrat par évacuation d'un liquide de traitement contenant un ou plusieurs types de produits chimiques et de l'eau pure. Ce dispositif de traitement de substrat comprend : un réservoir de stockage qui stocke le liquide de traitement pour effectuer le traitement prédéterminé sur le substrat ; une unité de traitement de substrat qui effectue le traitement prédéterminé sur le substrat par évacuation sur le substrat du liquide de traitement fourni par le réservoir de stockage ; un dispositif d'acquisition de quantité de d'évacuation qui acquiert la quantité d'évacuation du liquide de traitement évacué sur le substrat par l'unité de traitement de substrat ; un tuyau de récupération pour récupérer le liquide de traitement évacué dans l'unité de traitement de substrat sur le substrat ; et une unité de fourniture en liquide de traitement qui ajoute le liquide de traitement au réservoir dans une quantité de supplément déterminée sur la base de la quantité d'évacuation.
(JA)
処理液を再利用する基板処理装置において、タンクの容量を小型化しても処理液のタンクからの溢れを抑制する。本基板処理装置は、一種以上の薬液および純水を含む処理液を基板に吐出することで該基板に対して所定の処理を行う基板処理装置である。本基板処理装置は、基板に所定の処理を行うための処理液が貯留された貯留槽と、貯留槽から供給される処理液を基板に対して吐出することで、基板に対して所定の処理を実行する基板処理部と、基板処理部が基板に対して吐出した処理液の吐出量を取得する吐出量取得手段と、基板処理部において基板に対して吐出された処理液を貯留槽に回収する回収配管と、吐出量に基づいて決定される補充量の処理液を貯留槽に補充する処理液供給部と、を備える。
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