Processing

Please wait...

Settings

Settings

Goto Application

1. WO2019206135 - METHOD AND DEVICE FOR RADIOFREQUENCY IMPEDANCE MATCHING, AND SEMICONDUCTOR PROCESSING EQUIPMENT

Publication Number WO/2019/206135
Publication Date 31.10.2019
International Application No. PCT/CN2019/083882
International Filing Date 23.04.2019
IPC
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
CPC
H01J 37/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
H01J 37/32091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32091the radio frequency energy being capacitively coupled to the plasma
H01J 37/321
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
321the radio frequency energy being inductively coupled to the plasma
H01J 37/32183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32082Radio frequency generated discharge
32174Circuits specially adapted for controlling the RF discharge
32183Matching circuits, impedance matching circuits per se H03H7/38 and H03H7/40
H01J 37/32192
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
32192Microwave generated discharge
Applicants
  • 北京北方华创微电子装备有限公司 BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. [CN]/[CN]
Inventors
  • 韦刚 WEI, Gang
  • 卫晶 WEI, Jing
  • 杨京 YANG, Jing
Agents
  • 北京天昊联合知识产权代理有限公司 TEE&HOWE INTELLECTUAL PROPERTY ATTORNEYS
Priority Data
201810392841.X27.04.2018CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) METHOD AND DEVICE FOR RADIOFREQUENCY IMPEDANCE MATCHING, AND SEMICONDUCTOR PROCESSING EQUIPMENT
(FR) PROCÉDÉ ET DISPOSITIF PERMETTANT UNE MISE EN CORRESPONDANCE D'IMPÉDANCE RADIOFRÉQUENCE ET ÉQUIPEMENT DE TRAITEMENT DE SEMI-CONDUCTEUR
(ZH) 射频阻抗匹配的方法及装置、半导体处理设备
Abstract
(EN)
Disclosed are a method, a device, and equipment for radiofrequency impedance matching, comprising: S110, a frequency sweep matching phase; and S120, a frequency sweep holding phase. S110 comprises the loop execution of the following steps for at least once: S111, acquiring a frequency sweep termination parameter of a radiofrequency power supply when at least one predetermined pulse phase of a current pulse cycle is finished; S112, determining whether the frequency sweep termination parameters of the predetermined pulse phases of the current pulse cycle match a target frequency sweep parameter; executing S120 when a match is found and executing S113 when no match is found; S113, in predetermined pulse phases of the next pulse cycle, the radiofrequency power supply performs frequency sweeps respectively on the basis of the frequency sweep termination parameters of the predetermined pulse phases of the previous pulse cycle; and S120 comprising: in predetermined pulse phases of subsequent pulse cycles, the radiofrequency power supply stops frequency sweeping and holds the frequency sweep termination parameter matching the target frequency sweep parameter. This allows a quick frequency sweep for a match with the target frequency sweep parameter and effectively ensures that a pulsed plasma is ignited smoothly.
(FR)
La présente invention concerne un procédé, un dispositif et un équipement permettant une mise en correspondance d'impédance radiofréquence, comprenant : une étape S110 consistant en une phase de mise en correspondance de balayage de fréquence; et une étape S120 consistant en une phase de maintien de balayage de fréquence. L'étape S110 comprend l'exécution en boucle des étapes suivantes pour au moins une fois : l'étape S111 consistant à acquérir un paramètre de fin de balayage de fréquence d'une alimentation électrique radiofréquence lorsqu'au moins une phase d'impulsion prédéterminée d'un cycle d'impulsion en cours est terminée; l'étape S112 consistant à déterminer si les paramètres de fin de balayage de fréquence des phases d'impulsion prédéterminées du cycle d'impulsion en cours correspondent à un paramètre de balayage de fréquence cible; à exécuter l'étape S120 lorsqu'une correspondance est trouvée et à exécuter l'étape S113 lorsqu'aucune correspondance n'est trouvée; l'étape S113 consistant en ce que, dans des phases d'impulsion prédéterminées du cycle d'impulsion suivant, l'alimentation électrique radiofréquence effectue des balayages de fréquence respectivement sur la base des paramètres de fin de balayage de fréquence des phases d'impulsion prédéterminées du précédent cycle d'impulsion; et l'étape S120 consistant en ce que : dans des phases d'impulsion prédéterminées de cycles d'impulsion suivants, l'alimentation électrique radiofréquence arrête le balayage de fréquence et maintient le paramètre de fin de balayage de fréquence correspondant au paramètre de balayage de fréquence cible. Ceci permet un balayage de fréquence rapide pour une correspondance avec le paramètre de balayage de fréquence cible et assure de manière efficace qu'un plasma pulsé est amorcé sans à-coups.
(ZH)
本发明公开了射频阻抗匹配的方法、装置和设备。包括:S110、扫频匹配阶段;S120、扫频保持阶段;S110包括循环执行至少一次下述步骤:S111、获取当前脉冲周期在预定的至少一个脉冲阶段结束时射频电源的扫频结束参数;S112、分别判断当前脉冲周期的各预定的脉冲阶段的扫频结束参数是否与目标扫频参数匹配;当匹配时,执行S120,不匹配时,执行S113;S113、下一个脉冲周期的各预定的脉冲阶段,射频电源分别根据前一个脉冲周期的各预定的脉冲阶段的扫频结束参数进行扫频;S120包括:后续脉冲周期的各预定的脉冲阶段,射频电源停止扫频,并保持与目标扫频参数匹配的扫频结束参数。能够快速扫频至与目标扫频参数相匹配,有效保证脉冲等离子体顺利点火。
Also published as
Latest bibliographic data on file with the International Bureau