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1. WO2019202890 - COLOR IMAGE-CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE

Publication Number WO/2019/202890
Publication Date 24.10.2019
International Application No. PCT/JP2019/011138
International Filing Date 18.03.2019
IPC
H01L 27/146 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
G02B 5/20 2006.1
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
H04N 9/07 2006.1
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
NPICTORIAL COMMUNICATION, e.g. TELEVISION
9Details of colour television systems
04Picture signal generators
07with one pick-up device only
CPC
G02B 5/20
GPHYSICS
02OPTICS
BOPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
5Optical elements other than lenses
20Filters
H01L 27/14621
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1462Coatings
14621Colour filter arrangements
H01L 27/14625
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
H01L 27/14627
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14627Microlenses
H01L 27/14629
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14625Optical elements or arrangements associated with the device
14629Reflectors
H01L 27/14645
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14645Colour imagers
Applicants
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
Inventors
  • 宮田 将司 MIYATA Masashi
  • 中島 光雅 NAKAJIMA Mitsumasa
  • 橋本 俊和 HASHIMOTO Toshikazu
Agents
  • 特許業務法人 谷・阿部特許事務所 TANI & ABE, P.C.
Priority Data
2018-07944417.04.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) COLOR IMAGE-CAPTURE ELEMENT AND IMAGE CAPTURE DEVICE
(FR) ÉLÉMENT DE CAPTURE D'IMAGE COULEUR ET DISPOSITIF DE CAPTURE D'IMAGE
(JA) カラー撮像素子および撮像装置
Abstract
(EN)
Provided is a highly sensitive color image-capture element and an image capture device which can be fabricated simply and have reduced polarization dependency, and in which micro-spectroscopic elements capable of separating incident light into three wavelength regions are opposed to a 2-dimensional pixel array and integrated. An image-capture element 100 comprises a 2-dimensional pixel array in which pixels 102 including photoelectric conversion elements are arranged in an array, and on which a low refraction-index transparent layer 111 made of SiO2 or the like and a plurality of micro lenses 103 are stacked. The low refraction-index transparent layer 111 has embedded therein a plurality of micro-spectroscopic elements 101 comprising micro-structures which are formed from a material, such as SiN, having a refraction index higher than the refraction index of the transparent layer 111, and which have a constant thickness (length in a vertical direction with respect to the 2-dimensional pixel array).
(FR)
L'invention concerne un élément de capture d'image couleur hautement sensible et un dispositif de capture d'image qui peuvent être fabriqués simplement et présentent une dépendance de polarisation réduite, et dans lequel des éléments micro-spectroscopiques capables de séparer la lumière incidente en trois régions de longueur d'onde sont opposés à une matrice de pixels bidimensionnels et intégrés. Un élément de capture d'image 100 comprend une matrice de pixels bidimensionnels dans laquelle des pixels 102 comprenant des éléments de conversion photoélectrique sont agencés dans une matrice et sur laquelle sont empilées une couche transparente à faible indice de réfraction 111 en SiO2 ou similaire et une pluralité de microlentilles 103. La couche transparente à faible indice de réfraction 111 comprend une pluralité d'éléments micro-spectroscopiques 101 comprenant des microstructures qui sont formées à partir d'un matériau, tel que SiN, ayant un indice de réfraction supérieur à l'indice de réfraction de la couche transparente 111, et qui ont une épaisseur constante (longueur dans une direction verticale par rapport à la matrice de pixels bidimensionnels).
(JA)
簡易に作製でき、偏光依存性が少なく、かつ入射光を3波長領域に分離させることが可能な微小分光素子を2次元画素アレイと対向させて集積した高感度のカラー撮像素子および撮像装置を提供すること。撮像素子100は、光電変換素子を含む画素102がアレイ状になるように配列された2次元画素アレイ上に、SiO2等からなる低屈折率の透明層111、複数のマイクロレンズ103が積層されている。低屈折率の透明層111の内部には、透明層111の屈折率よりも高い屈折率を有するSiN等の材料から形成された複数の厚み(2次元画素アレイに対して垂直方向の長さ)が一定の微細構造体からなる微小分光素子101が埋め込まれている。
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