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1. WO2019198670 - ELECTRODE STRUCTURE

Publication Number WO/2019/198670
Publication Date 17.10.2019
International Application No. PCT/JP2019/015335
International Filing Date 08.04.2019
IPC
H01L 21/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56Encapsulations, e.g. encapsulating layers, coatings
G01N 27/333 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
28Electrolytic cell components
30Electrodes, e.g. test electrodes; Half-cells
333Ion-selective electrodes or membranes
G06K 19/00 2006.01
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
19Record carriers for use with machines and with at least a part designed to carry digital markings
H01L 23/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulation, e.g. encapsulating layers, coatings
H01L 27/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
CPC
G01N 27/28
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
28Electrolytic cell components
G01N 27/333
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
28Electrolytic cell components
30Electrodes, e.g. test electrodes; Half-cells
333Ion-selective electrodes or membranes
G01N 27/416
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
416Systems
G06K 19/00
GPHYSICS
06COMPUTING; CALCULATING; COUNTING
KRECOGNITION OF DATA; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
19Record carriers for use with machines and with at least a part designed to carry digital markings
H01L 21/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, ; e.g. sealing of a cap to a base of a container
56Encapsulations, e.g. encapsulation layers, coatings
H01L 23/28
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
28Encapsulations, e.g. encapsulating layers, coatings, ; e.g. for protection
Applicants
  • 株式会社日立ハイテク HITACHI HIGH-TECH CORPORATION [JP]/[JP]
Inventors
  • 池田 宇亨 IKEDA Ukyo
  • 小野 哲義 ONO Tetsuyoshi
  • 中土 裕樹 NAKATSUCHI Hiroki
  • 三宅 雅文 MIYAKE Masafumi
Agents
  • 青稜特許業務法人 SEIRYO I.P.C.
Priority Data
2018-07509510.04.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) ELECTRODE STRUCTURE
(FR) STRUCTURE D'ÉLECTRODE
(JA) 電極構造
Abstract
(EN)
An electrode formed by molding a semiconductor device with resin. The electrode comprises: a first resin mold portion formed on a front surface of the semiconductor device and having a first thickness (t1); a second resin mold portion formed on a back surface of the semiconductor device and having a second thickness (t2) greater than the first thickness; and an exposed portion formed in a part of the first resin mold portion corresponding to an end of the semiconductor device.
(FR)
L'invention concerne une électrode formée par moulage d'un dispositif à semi-conducteur avec de la résine. L'électrode comprend : une première partie de moule en résine formée sur une surface avant du dispositif à semi-conducteur et ayant une première épaisseur (t1); une seconde partie de moule en résine formée sur une surface arrière du dispositif à semi-conducteur et ayant une seconde épaisseur (t2) supérieure à la première épaisseur; et une partie exposée formée dans une partie de la première partie de moule en résine correspondant à une extrémité du dispositif à semi-conducteur.
(JA)
半導体デバイスを樹脂でモールドして形成された電極である。電極は、半導体デバイスの表面に形成され第1の厚さ(t1)を有する第1の樹脂モールド部と、半導体デバイスの裏面に形成され第1の厚さよりも大きい第2の厚さ(t2)を有する第2の樹脂モールド部と、第1の樹脂モールド部における半導体デバイスの端部に対応する部分に形成された露出部とを有する。
Also published as
EP2019785253
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