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1. WO2019187881 - NEGATIVE-TYPE PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE

Publication Number WO/2019/187881
Publication Date 03.10.2019
International Application No. PCT/JP2019/007155
International Filing Date 26.02.2019
IPC
G03F 7/038 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
G03F 7/039 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
G03F 7/0046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0046with perfluoro compounds, e.g. for dry lithography
G03F 7/0382
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
038Macromolecular compounds which are rendered insoluble or differentially wettable
0382the macromolecular compound being present in a chemically amplified negative photoresist composition
G03F 7/0392
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
G03F 7/2004
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2002with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
2004characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 二橋 亘 NIHASHI Wataru
  • 白川 三千紘 SHIRAKAWA Michihiro
  • 小川 倫弘 OGAWA Michihiro
Agents
  • 伊東 秀明 ITOH Hideaki
  • 三橋 史生 MITSUHASHI Fumio
Priority Data
2018-06907130.03.2018JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) NEGATIVE-TYPE PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE
(FR) COMPOSITION PHOTOSENSIBLE DE TYPE NÉGATIF POUR LUMIÈRE EUV, PROCÉDÉ DE FORMATION DE MOTIF ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE
(JA) EUV光用ネガ型感光性組成物、パターン形成方法、電子デバイスの製造方法
Abstract
(EN)
A negative-type photosensitive composition for EUV light is provided which can form patterns in which the occurrence of missing defects is suppressed and in which pattern collapse is suppressed. A pattern forming method and a manufacturing method of an electronic device are also provided. This negative-type photosensitive composition for EUV light contains photo acid generator, and a resin A which has a repeating unit having an acid-decomposable group with polar groups protected by a protective group which is eliminated by the action of an acid. The ClogP value of the resin after elimination of the protective group from the resin A is less than or equal to 1.4, and the value x calculated with formula (1) is greater than or equal to 1.2. The value x calculated by formula (1) and the value y calculated by formula (2) satisfy the relation of formula (3).
(FR)
L'invention concerne une composition photosensible de type négatif pour lumière EUV qui permet de former des motifs dans lesquels l'éventualité qu'il y ait des défauts ou des éléments manquants est supprimée et dans lesquels l'effondrement du motif est éliminé. L'invention concerne également un procédé de formation de motif et un procédé de production d'un dispositif électronique. Cette composition photosensible de type négatif pour lumière EUV contient un générateur d'acide photo et une résine A qui possède un motif récurrent doté d'un groupe décomposable par un acide et de groupes polaires protégés par un groupe protecteur qui est éliminé par l'action d'un acide. La valeur ClogP de la résine après l'élimination du groupe protecteur de la résine A est inférieure ou égale à 1,4, et la valeur x calculée grâce à la formule (1) est supérieure ou égale à 1,2. La valeur x calculée grâce à la formule (1) et la valeur y calculée grâce à la formule (2) satisfont la relation de la formule (3).
(JA)
本発明は、ミッシング欠陥の発生が抑制され、かつ、パターン倒れが抑制されたパターンを形成可能なEUV光用ネガ型感光性組成物を提供する。パターン形成方法、及び、電子デバイスの製造方法を提供する。本発明のEUV光用ネガ型感光性組成物は、酸の作用により脱離する保護基で極性基が保護された酸分解性基を有する繰り返し単位を有する樹脂A、及び、光酸発生剤を含み、樹脂Aから保護基が脱離した後の樹脂のClogP値が1.4以下であり、式(1)で計算される値xが1.2以上であり、式(1)で計算される値xと、式(2)で計算される値yとが、式(3)の関係を満たす。
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