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1. WO2019172089 - SEMICONDUCTOR INTEGRATED OPTICS ELEMENT AND PRODUCTION METHOD THEREFOR

Publication Number WO/2019/172089
Publication Date 12.09.2019
International Application No. PCT/JP2019/007910
International Filing Date 28.02.2019
IPC
H01S 5/042 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping
042Electrical excitation
H01S 5/026 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors or drivers
H01S 5/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
12the resonator having a periodic structure, e.g. in distributed feed-back  lasers
H01S 5/227 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave
22having a ridge or a stripe structure
227Buried mesa structure
H01S 5/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02-H01S5/30100
CPC
H01S 5/0042
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
0014Measuring characteristics or properties thereof
0042On wafer testing, e.g. lasers are tested before separating wafer into chips
H01S 5/0202
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0201Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
0202Cleaving
H01S 5/0265
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
0265Intensity modulators
H01S 5/04256
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04256characterised by the configuration
H01S 5/06226
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
062by varying the potential of the electrodes
06226Modulation at ultra-high frequencies
H01S 5/1039
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
1039Details on the cavity length
Applicants
  • 日本電信電話株式会社 NIPPON TELEGRAPH AND TELEPHONE CORPORATION [JP]/[JP]
Inventors
  • 進藤 隆彦 SHINDO Takahiko
  • 藤原 直樹 FUJIWARA Naoki
  • 佐野 公一 SANO Kimikazu
  • 石井 啓之 ISHII Hiroyuki
  • 松崎 秀昭 MATSUZAKI Hideaki
  • 山田 貴 YAMADA Takashi
  • 堀越 建吾 HORIKOSHI Kengo
Agents
  • 特許業務法人 谷・阿部特許事務所 TANI & ABE, P.C.
Priority Data
2018-04091207.03.2018JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR INTEGRATED OPTICS ELEMENT AND PRODUCTION METHOD THEREFOR
(FR) ÉLÉMENT OPTIQUE INTÉGRÉ À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE PRODUCTION
(JA) 半導体光集積素子およびその製造方法
Abstract
(EN) The purpose of the invention is to prevent increases in production costs, without additional inspection steps, when providing semiconductor integrated optics elements (AXEL) with higher output. The invention provides a semiconductor integrated optics element production method comprising: the step of forming a semiconductor wafer on which a plurality of semiconductor integrated optics elements are two dimensionally arranged with the optical axis directions thereof being aligned, each semiconductor integrated optics element comprising a DFB laser, EA modulator, and SOA monolithically integrated on the same substrate and disposed in the order of DFB laser, EA modulator, and SOA in the light output direction; the step of cleaving the semiconductor wafer in a plane orthogonal to the light output direction into a semiconductor bar comprising a plurality of the semiconductor integrated optics elements arranged one-dimensionally in an orthogonal direction to the light output direction with adjacent semiconductor integrated optics elements sharing the same cleavage end face as a light output surface; the step of inspecting each of the semiconductor integrated optics elements on the semiconductor bar by energizing and driving the same via a connection wiring section electrically connecting an electrode of the SOA to an electrode of the DFB laser; and the step, after the inspection, of separating each of the semiconductor integrated optics elements on the semiconductor bar at a boundary line with the adjacent semiconductor integrated optics element so that the connection wiring section connecting the electrode of the SOA to the electrode of the DFB laser is cut and the semiconductor integrated optics elements are electrically separated from each other.
(FR) L'objectif de l'invention est d'empêcher des augmentations de coûts de production, sans étapes d'inspection supplémentaires, lors de la fourniture d'éléments optiques intégrés à semi-conducteur (AXEL) avec une sortie plus élevée. L'invention concerne un procédé de production d'élément optique intégré à semi-conducteur comprenant : l'étape consistant à former une tranche semi-conductrice sur laquelle une pluralité d'éléments optiques intégrés à semi-conducteur sont agencés de façon bidimensionnelle, les directions d'axe optique de celle-ci étant alignées, chaque élément optique intégré à semi-conducteur comprenant un laser DFB, un modulateur EA et un SOA intégrés de manière monolithique sur le même substrat et disposés dans l'ordre du laser DFB, le modulateur EA, et le SOA dans la direction de sortie de lumière ; l'étape de clivage de la tranche semi-conductrice dans un plan orthogonal à la direction de sortie de lumière dans une barre semi-conductrice comprenant une pluralité des éléments optiques intégrés à semi-conducteur agencés de façon unidimensionnelle dans une direction orthogonale par rapport à la direction de sortie de lumière avec des éléments optiques intégrés à semi-conducteur adjacents partageant la même face d'extrémité de clivage en tant que surface de sortie de lumière ; l'étape consistant à inspecter chacun des éléments optiques intégrés à semi-conducteur sur la barre semi-conductrice par excitation et commande de celle-ci par l'intermédiaire d'une section de câblage de connexion connectant électriquement une électrode du SOA à une électrode du laser DFB ; et l'étape, après l'inspection, de séparation de chacun des éléments optiques intégrés à semi-conducteur sur la barre semi-conductrice au niveau d'une ligne limite avec l'élément optique intégré à semi-conducteur adjacent de sorte que la section de câblage de connexion connectant l'électrode du SOA à l'électrode du laser DFB soit coupée et que les éléments optiques intégrés à semi-conducteur soient séparés électriquement les uns des autres.
(JA) 半導体光集積素子(AXEL)の更なる高出力化において、検査工程を追加することなく、製造コストの増大を防ぐ。DFBレーザと、EA変調器と、SOAとが同一基板上にモノリシック集積され、光出射方向に、前記DFBレーザ、前記EA変調器、前記SOAの順に配置された半導体光集積素子を、光軸方向を揃えて複数二次元配列して半導体ウエハを形成するステップと、前記半導体ウエハを光出射方向に直交する面で劈開して、複数の前記半導体光集積素子が光出射方向に直交する方向に一次元配列して、隣接する前記半導体光集積素子が同一の劈開端面を光出射面として共有する半導体バーを形成するステップと、前記半導体バーの前記各半導体光集積素子を、前記SOAの電極と前記DFBレーザの電極を電気的に接続する接続配線部を介して通電駆動して検査するステップと、検査後に前記半導体バーの前記各半導体光集積素子を、隣接する半導体光集積素子との境界線で分離することにより、前記SOAの電極と前記DFBレーザの電極を接続する前記接続配線部を切断して電気的に分離するステップとから構成されている半導体光集積素子の製造方法とした。
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