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1. WO2019166576 - METHOD FOR P-TYPE DOPING OF SILICON CARBIDE BY AL/BE CO-IMPLANTATION

Publication Number WO/2019/166576
Publication Date 06.09.2019
International Application No. PCT/EP2019/055041
International Filing Date 28.02.2019
IPC
H01L 21/265 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
H01L 29/872 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
872Schottky diodes
H01L 29/16 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System in uncombined form
CPC
H01L 21/046
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0455Making n or p doped regions or layers, e.g. using diffusion
046using ion implantation
H01L 29/1608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
1608Silicon carbide
H01L 29/167
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
12characterised by the materials of which they are formed
16including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
167further characterised by the doping material
H01L 29/872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
861Diodes
872Schottky diodes
Applicants
  • ABB POWER GRIDS SWITZERLAND AG [CH]/[CH]
Inventors
  • ALFIERI, Giovanni
  • SUNDARAMOORTHY, Vinoth
Agents
  • KUHNEN & WACKER PATENT- UND RECHTSANWALTSBÜRO PARTG MBB
Priority Data
18159223.928.02.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR P-TYPE DOPING OF SILICON CARBIDE BY AL/BE CO-IMPLANTATION
(FR) PROCÉDÉ DE DOPAGE DE TYPE P DE CARBURE DE SILICIUM PAR CO-IMPLANTATION D'AL/BE
Abstract
(EN)
It is provided a method for p-type doping of a silicon carbide layer. The method comprises a step of providing the silicon carbide layer (1); a first implantation step of implanting Aluminium (Al) dopants into a preselected region (6) of the silicon carbide layer (1) by ion implantation; an annealing step of annealing the silicon carbide layer (1) after the first implantation step, and is characterized in that a second implantation step of implanting Beryllium (Be) dopants into the preselected region (6) by ion implantation is performed before the annealing step. Advantageously, the method improves the electrically activation of the implanted dopants and thus yields a higher free hole concentration (p) at room temperature.
(FR)
L'invention concerne un procédé de dopage de type p d'une couche de carbure de silicium. Le procédé comprend une étape de fourniture de la couche de carbure de silicium (1); une première étape d'implantation consistant à implanter des dopants d'aluminium (Al) dans une région présélectionnée (6) de la couche de carbure de silicium (1) par implantation ionique; une étape de recuit consistant à recuire la couche de carbure de silicium (1) après la première étape d'implantation, et étant caractérisée en ce qu'une seconde étape d'implantation consistant à implanter des dopants de béryllium (Be) dans la région présélectionnée (6) par implantation ionique est effectuée avant l'étape de recuit. Avantageusement, le procédé améliore l'activation électrique des dopants implantés et permet ainsi d'obtenir une concentration de trous libres plus élevée (p) à température ambiante.
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