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1. WO2019131145 - METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE

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Publication Number WO/2019/131145
Publication Date 04.07.2019
International Application No. PCT/JP2018/045735
International Filing Date 12.12.2018
IPC
H05B 33/10 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H01L 51/50 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H05B 33/22 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
22characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
H05B 33/26 2006.1
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
26characterised by the composition or arrangement of the conductive material used as an electrode
CPC
H01L 51/0023
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0021Formation of conductors
0023Patterning of conductive layers
H01L 51/5209
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5206Anodes, i.e. with high work-function material
5209characterised by the shape
H01L 51/5215
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
52Details of devices
5203Electrodes
5206Anodes, i.e. with high work-function material
5215composed of transparent multilayers
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H05B 33/10
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
H05B 33/22
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
BELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33Electroluminescent light sources
12Light sources with substantially two-dimensional radiating surfaces
22characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
Applicants
  • 住友化学株式会社 SUMITOMO CHEMICAL COMPANY, LIMITED [JP]/[JP]
Inventors
  • 井上　裕康 INOUE Hiroyasu
  • 岸川　英司 KISHIKAWA Eiji
  • 赤對　真人 SHAKUTSUI Masato
Agents
  • 長谷川　芳樹 HASEGAWA Yoshiki
  • 清水　義憲 SHIMIZU Yoshinori
  • 三上　敬史 MIKAMI Takafumi
Priority Data
2017-24944326.12.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
(FR) PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE ET DISPOSITIF ÉLECTRONIQUE
(JA) 電子デバイスの製造方法及び電子デバイス
front page image
Abstract
(EN) A method for producing an electronic device 1 according to one embodiment of the present invention comprises: a preparation step for preparing a substrate 2 with an electrode, which is obtained by providing a first electrode layer 20 on a substrate 10, and wherein the first electrode layer has a first conductive layer 21 and a second conductive layer 22 that is provided on the first conductive layer, and wherein at least a part of a specific region A in the edge of the first electrode layer is provided with an eave part 24 where the second conductive layer protrudes beyond the first conductive layer when viewed from the thickness direction of the substrate; a device function part formation step for forming a device function part 30 on the first electrode layer; a second electrode layer formation step for forming a second electrode layer on the device function part so that a part of the second electrode layer is arranged on the specific region of the first electrode layer; and a non-conductive part formation step for forming a non-conductive part 40 on at least a part of the specific region before the second electrode layer formation step.
(FR) L'invention concerne un procédé de production de dispositif électronique (1) comprenant : une étape de préparation consistant à préparer un substrat (2) avec une électrode, l'étape étant obtenue par application d'une première couche d'électrode (20) sur un substrat (10), et la première couche d'électrode comprenant une première couche conductrice (21) et une seconde couche conductrice (22) se trouvant sur la première couche conductrice, au moins une partie d'une région spécifique A sur le bord de la première couche d'électrode étant pourvue d'une partie saillante (24) où la seconde couche conductrice fait saillie au-delà de la première couche conductrice dans une vue depuis la direction d'épaisseur du substrat ; une étape de formation de partie de fonction de dispositif consistant à former une partie de fonction de dispositif (30) sur la première couche d'électrode ; une étape de formation d'une seconde couche d'électrode consistant à former une seconde couche d'électrode sur la partie de fonction de dispositif de telle sorte qu'une partie de la seconde couche d'électrode se trouve sur la région spécifique de la première couche d'électrode ; et une étape de formation de partie non conductrice consistant à former une partie non conductrice (40) sur au moins une partie de la région spécifique avant l'étape de formation de la seconde couche d'électrode.
(JA) 一実施形態に係る電子デバイス１の製造方法は、基板１０上に第１電極層２０が設けられた電極付き基板２を準備する準備工程であり、第１電極層が、第１導電層２１と第１導電層上に設けられた第２導電層２２とを有し、第１電極層の縁部の所定領域Ａの少なくとも一部に、基板の厚さ方向からみた場合に第２導電層が第１導電層より外側に突出した庇部２４が形成されている準備工程と、第１電極層上にデバイス機能部３０を形成するデバイス機能部形成工程と、第２電極層の一部が第１電極層の所定領域上に配置されるように、デバイス機能部上に第２電極層を形成する第２電極層形成工程と、第２電極層形成工程より前に、所定領域の少なくとも一部上に非導電部４０を形成する非導電部形成工程と、を備える。
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