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1. WO2019131074 - CONTROL METHOD FOR RECOMBINATION LIFETIMES

Publication Number WO/2019/131074
Publication Date 04.07.2019
International Application No. PCT/JP2018/045201
International Filing Date 10.12.2018
IPC
H01L 21/322 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322to modify their internal properties, e.g. to produce internal imperfections
C30B 13/00 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
13Single-crystal growth by zone-melting; Refining by zone-melting
C30B 29/06 2006.1
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
H01L 21/66 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
H01L 29/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 29/739 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70Bipolar devices
72Transistor-type devices, i.e. able to continuously respond to applied control signals
739controlled by field effect
CPC
C30B 13/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
13Single-crystal growth by zone-melting; Refining by zone-melting
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 33/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02Heat treatment
C30B 33/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
04using electric or magnetic fields or particle radiation
H01L 21/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
223using diffusion into or out of a solid from or into a gaseous phase
H01L 21/263
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 竹野 博 TAKENO Hiroshi
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2017-25443128.12.2017JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) CONTROL METHOD FOR RECOMBINATION LIFETIMES
(FR) PROCÉDÉ DE COMMANDE POUR DURÉES DE VIE DE RECOMBINAISON
(JA) 再結合ライフタイムの制御方法
Abstract
(EN) A control method for recombination lifetimes characterized: by controlling the carrier recombination lifetime in a silicon single crystal substrate by performing a preparation step of preparing a silicon single crystal substrate from a nitrogen-added silicon single crystal grown by the FZ method, a heating step A of performing heat application, a particle beam irradiation step of irradiating the silicon single crystal substrate with a particle beam, and a heating step B of heating the silicon single crystal substrate; and in that the nitrogen concentration Cn in the silicon single crystal substrate is adjusted by causing the nitrogen in the silicon single crystal substrate to diffuse outward in the heating step A depending on the oxygen concentration Co in the silicon single crystal substrate prepared in the preparation step, and subsequently, the particle beam irradiation step is performed. Thus, provided is a control method for recombination lifetimes which can ensure less variability in recombination lifetimes originating in nitrogen-added FZ silicon single crystal substrates, and can control recombination lifetimes with a high degree of accuracy.
(FR) La présente invention concerne un procédé de commande pour des durées de vie de recombinaison caractérisé en ce qu'il consiste à commander la durée de vie de recombinaison de porteur dans un substrat de monocristal de silicium par réalisation d'une étape de préparation consistant à préparer un substrat de monocristal de silicium à partir d'un monocristal de silicium additionné d'azote cultivé selon le procédé FZ, une étape de chauffage A consistant à réaliser une application de chaleur, une étape de rayonnement de faisceau de particules consistant à soumettre le substrat de monocristal de silicium au rayonnement d'un faisceau de particules et une étape de chauffage B consistant à chauffer le substrat de monocristal de silicium; et en ce que la concentration d'azote Cn dans le substrat de monocristal de silicium est ajustée en amenant l'azote dans le substrat de monocristal de silicium à se diffuser vers l'extérieur dans l'étape de chauffage A en fonction de la concentration en oxygène Co dans le substrat de monocristal de silicium préparé dans l'étape de préparation et ensuite, l'étape de rayonnement de faisceau de particules est effectuée. Ainsi, l'invention concerne un procédé de commande pour durées de vie de recombinaison qui peut garantir une plus faible variabilité dans des durées de vie de recombinaison provenant de substrats de monocristal de silicium FZ additionné d'azote et peut commander des durées de vie de recombinaison selon un degré élevé de précision.
(JA) 本発明は、FZ法により育成された窒素添加のシリコン単結晶からシリコン単結晶基板を準備する準備工程と、熱処理を施す熱処理工程Aと、シリコン単結晶基板に粒子線を照射する粒子線照射工程と、シリコン単結晶基板を熱処理する熱処理工程Bとを行うことで、シリコン単結晶基板のキャリアの再結合ライフタイムを制御する再結合ライフタイムの制御方法であって、準備工程で準備されたシリコン単結晶基板の酸素濃度Coに応じて、熱処理工程Aにおいて、シリコン単結晶基板中の窒素を外方拡散させることによりシリコン単結晶基板の窒素濃度Cnを調整し、その後、粒子線照射工程を行うことを特徴とする再結合ライフタイムの制御方法である。これにより、窒素添加FZシリコン単結晶基板に起因した再結合ライフタイムのばらつきを確実に小さくでき、再結合ライフタイムを高精度で制御できる再結合ライフタイムの制御方法が提供される。
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