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1. WO2019083899 - THIN FILM SELF-SWITCHING DEVICE

Publication Number WO/2019/083899
Publication Date 02.05.2019
International Application No. PCT/US2018/056927
International Filing Date 22.10.2018
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
24
including solid state components for rectifying, amplifying, or switching without a potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8238
Complementary field-effect transistors, e.g. CMOS
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8248
Combination of bipolar and field-effect technology
H01L 27/24 (2006.01)
H01L 27/04 (2006.01)
H01L 29/417 (2006.01)
H01L 29/66 (2006.01)
H01L 29/86 (2006.01)
H01L 21/8238 (2006.01)
CPC
H01L 45/06
H01L 45/1226
H01L 45/126
H01L 45/1286
H01L 45/14
H01L 45/1608
Applicants
  • PRINTED ENERGY PTY LTD [AU/AU]; Level 11 344 Queen Street Brisbane, Queensland 4000, AU
Inventors
  • LOCKETT, Vera, N.; US
  • KOLLI, Sri, Harsha; US
  • RAY, William, J.; US
Agents
  • DELANEY, Karoline, A.; US
Priority Data
62/575,92523.10.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) THIN FILM SELF-SWITCHING DEVICE
(FR) DISPOSITIF D'AUTOCOMMUTATION À FILM MINCE
Abstract
(EN)
A self-switching device includes a thin film conductive line and a gap in the thin film conductive line having disposed therein a resistance change (RC) material. Upon application of a current across the gap, the RC material transitions from a low resistance state (LRS) to a high resistance state (HRS), and wherein upon attaining the HRS, the RC material transitions from the HRS to the LRS by self-switching.
(FR)
L'invention concerne un dispositif d'autocommutation comprenant une ligne conductrice à film mince et un espace dans la ligne conductrice à film mince dans lequel est disposé un matériau à changement de résistance (RC). Lors de l'application d'un courant à travers l'espace, le matériau RC passe d'un état de faible résistance (LRS) à un état de résistance élevée (HRS), et lors de l'atteinte du HRS, le matériau RC passe du HRS au LRS par autocommutation.
Latest bibliographic data on file with the International Bureau