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1. (WO2019068058) LASER
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Pub. No.: WO/2019/068058 International Application No.: PCT/US2018/053664
Publication Date: 04.04.2019 International Filing Date: 29.09.2018
IPC:
H01S 5/00 (2006.01) ,H01S 5/06 (2006.01) ,H01S 5/125 (2006.01) ,H01S 5/02 (2006.01) ,H01S 5/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
06
Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
12
the resonator having a periodic structure, e.g. in distributed feed-back lasers (DFB-lasers)
125
Distributed Bragg reflector lasers (DBR-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
02
Structural details or components not essential to laser action
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
Applicants:
HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP [US/US]; 11445 Compaq Center Drive West Houston, Texas 77070, US
Inventors:
KURCZVEIL, Geza; US
BEAUSOLEIL, Raymond G.; US
LIANG, Di; US
ZHANG, Chong; US
KIELPINSKI, David; US
Agent:
FEBBO, Michael A.; US
FOR ADDITIONAL NAMES, SEE ATTACHED PCT GENERAL POWER OF ATTORNEY; Hewlett Packard Enterprise 3404 E. Harmony Road Mail Stop 79 Fort Collins, Colorado 80528, US
Priority Data:
15/720,49329.09.2017US
Title (EN) LASER
(FR) LASER
Abstract:
(EN) A semiconductor laser includes a traveling wave laser cavity in which laser pulses travel around the cavity in a direction of propagation. The semiconductor laser further includes an active section, a pulse stretcher, and a pulse compressor. The active section comprises a semiconductor optical amplifier, and a saturatable absorber. The pulse stretcher is coupled to the waveguide before the active section and the pulse compressor are coupled to the waveguide after the active section.
(FR) L'invention concerne un laser comprenant une cavité laser à ondes progressives avec une section active, un extenseur d'impulsions et un compresseur d'impulsions. L'extenseur d'impulsions est couplé au guide d'ondes avant la section active et le compresseur d'impulsions est couplé au guide d'ondes après la section active.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)