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1. (WO2019068012) METHOD AND APPARATUS FOR SPECIFYING READ VOLTAGE OFFSETS FOR A READ COMMAND
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Pub. No.: WO/2019/068012 International Application No.: PCT/US2018/053590
Publication Date: 04.04.2019 International Filing Date: 28.09.2018
IPC:
G11C 16/26 (2006.01) ,G11C 16/30 (2006.01) ,G11C 16/04 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
26
Sensing or reading circuits; Data output circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
06
Auxiliary circuits, e.g. for writing into memory
30
Power supply circuits
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
16
Erasable programmable read-only memories
02
electrically programmable
04
using variable threshold transistors, e.g. FAMOS
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
Inventors:
MADRASWALA, Aliasgar S.; US
GUO, Xin; US
PRABHU, Naveen Vittal; US
DU, Yu; US
SULE, Purval Shyam; US
Agent:
CASPER, Derek; US
Priority Data:
15/721,35129.09.2017US
Title (EN) METHOD AND APPARATUS FOR SPECIFYING READ VOLTAGE OFFSETS FOR A READ COMMAND
(FR) PROCÉDÉ ET APPAREIL POUR SPÉCIFIER DES DÉCALAGES DE TENSION DE LECTURE POUR UNE COMMANDE DE LECTURE
Abstract:
(EN) In one embodiment, an apparatus comprises a memory array and a controller. The controller is to receive a first read command specifying a read voltage offset profile identifier; identify a read voltage offset profile associated with the read voltage offset profile identifier, the read voltage offset profile comprising at least one read voltage offset; and perform a first read operation specified by the first read command using at least one read voltage adjusted according to the at least one read voltage offset of the read voltage offset profile.
(FR) Selon un mode de réalisation, l'invention concerne une matrice mémoire et un contrôleur. Le contrôleur est destiné à recevoir une première commande de lecture spécifiant un identifiant de profil de décalage de tension de lecture ; à identifier un profil de décalage de tension de lecture associé à l'identifiant de profil de décalage de tension de lecture, le profil de décalage de tension de lecture comprenant au moins un décalage de tension de lecture ; et à effectuer une première opération de lecture spécifiée par la première commande de lecture à l'aide d'au moins une tension de lecture ajustée selon le ou les décalages de tension de lecture du profil de décalage de tension de lecture.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)