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1. (WO2019068001) FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
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Pub. No.: WO/2019/068001 International Application No.: PCT/US2018/053572
Publication Date: 04.04.2019 International Filing Date: 28.09.2018
IPC:
H01L 21/20 (2006.01) ,H01L 29/06 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
Applicants:
THE TEXAS A&M UNIVERSITY SYSTEM [US/US]; 3369 Tamu College Station, TX 77843-3369, US
Inventors:
BABB, Michael, Everett; US
HARRIS, Harlan, Rusty; US
Agent:
GOPALAKRISHNAN, Lekha; US
MOON, William, Allen; US
MOORE, Stanley, R.; US
LOVELL, David, A.; US
THOMAS, Daniel, A.; US
UDOVICH, Samuel, A.; US
Priority Data:
62/566,29029.09.2017US
Title (EN) FABRICATION OF LATERAL SUPERJUNCTION DEVICES USING SELECTIVE EPITAXY
(FR) FABRICATION DE DISPOSITIFS À SUPERJONCTION LATÉRALE PAR ÉPITAXIE SÉLECTIVE
Abstract:
(EN) A lateral superjunction includes a substrate layer, a selective epitaxy layer deposited on the substrate layer, a trench formed into the selective epitaxy layer to expose a portion of the substrate layer, a first layer of semiconductor deposited in the trench, a second layer of semiconductor deposited adjacent to the first layer, and a first end layer of semiconductor deposited adjacent to the first layer of semiconductor and a second end layer of semiconductor deposited adjacent to the second layer of semiconductor.
(FR) L'invention concerne une superjonction latérale comprenant une couche de substrat, une couche d'épitaxie sélective déposée sur la couche de substrat, une tranchée formée dans la couche d'épitaxie sélective pour exposer une partie de la couche de substrat, une première couche de semi-conducteur déposée dans la tranchée, une seconde couche de semi-conducteur déposée adjacente à la première couche, et une première couche d'extrémité de semi-conducteur déposée adjacente à la première couche de semi-conducteur et une seconde couche d'extrémité de semi-conducteur déposée adjacente à la seconde couche de semi-conducteur.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)