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1. (WO2019067900) TITANIUM (IV)-BASED HALIDE DOUBLE-PEROVSKITES WITH TUNABLE 1.0 TO 1.8 EV BANDGAPS FOR PHOTOVOLTAIC APPLICATIONS
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Pub. No.: WO/2019/067900 International Application No.: PCT/US2018/053426
Publication Date: 04.04.2019 International Filing Date: 28.09.2018
IPC:
H01L 31/0264 (2006.01) ,C01D 17/00 (2006.01) ,C01G 23/02 (2006.01) ,H01G 9/20 (2006.01) ,H01L 31/04 (2014.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248
characterised by their semiconductor bodies
0256
characterised by the material
0264
Inorganic materials
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
D
COMPOUNDS OF ALKALI METALS, i.e. LITHIUM, SODIUM, POTASSIUM, RUBIDIUM, CAESIUM, OR FRANCIUM
17
Rubidium, caesium, or francium compounds
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
23
Compounds of titanium
02
Halides of titanium
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
G
CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
9
Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
20
Light-sensitive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
Applicants:
BROWN UNIVERSITY [US/US]; 47 George Street P.O. Box 1949 Providence, Rhode Island 02912, US
THE BOARD OF REGENTS OF THE UNIVERSITY OF NEBRASKA [US/US]; 3835 Holdrege Street Lincoln, Nebraska 68583, US
Inventors:
PADTURE, Nitin P.; US
CHEN, Min; US
ZHOU, Yuanyuan; US
CHENG ZENG, Xiao; US
JU, Ming-gang; US
Agent:
IWANICKI, John P.; US
Priority Data:
62/564,59628.09.2017US
Title (EN) TITANIUM (IV)-BASED HALIDE DOUBLE-PEROVSKITES WITH TUNABLE 1.0 TO 1.8 EV BANDGAPS FOR PHOTOVOLTAIC APPLICATIONS
(FR) DOUBLES PÉROVSKITES D'HALOGÉNURES À BASE DE TITANE (IV) À BANDES INTERDITES RÉGLABLES DE 1,0 À 1,8 EV POUR APPLICATIONS PHOTOVOLTAÏQUES
Abstract:
(EN) Disclosed is a family of all-inorganic Ti (IV)-based perovskite materials that can be used in photovoltaic applications. These materials exhibit a double-perovskite crystal structure with a general chemical formula of A2TiX6 (A is K, Rb, Cs and In; X = Cl, Br and I). Specific representative family-members have the formula Cs2TiIxBr6-x (x = 0, 2, 4 and 6). The bandgap of Cs2TiIxBr6-x (0?x?6) can be tuned continuously from 1.02 eV to 1.78 eV. The family members Cs2TiBr6 and Cs2TiI2Br4 exhibit direct bandgaps of 1.78 and 1.38 eV, which are useful for single-junction PSCs and tandem PSCs. The useful thermal/environmental stability of the Ti (IV)-based perovskite materials has been confirmed. Ti-based perovskite solar cells are described herein. The resulting perovskite solar cells show a stable PCE of 2.36 % with a VOC of 0.97 V.
(FR) L'invention concerne une famille de matériaux pérovskites à base de Ti (IV) entièrement inorganiques, qui peuvent être utilisés dans des applications photovoltaïques. Ces matériaux présentent une structure cristalline double pérovskite ayant une formule chimique générale A2TiX6 (A est K, Rb, Cs et In ; X = Cl, Br et I). Des membres représentatifs spécifiques de la famille ont la formule Cs2TiIxBr6-x (x = 0, 2, 4 et 6). La bande interdite de Cs2TiIxBr6-x (0? x? 6) peut être réglée de façon continue de 1,02 eV à 1,78 eV. Les membres Cs2TiBr6 et Cs2TiI2Br4 de la famille présentent des bandes interdites directes de 1,78 et 1,38 eV, qui sont utiles pour des cellules solaires polymères (PSC) à jonction unique et des PSC tandem. La stabilité thermique/environnementale utile des matériaux pérovskites à base de Ti (IV) a été confirmée. L'invention concerne également des cellules solaires à pérovskites à base de Ti. Les cellules solaires à pérovskites obtenues présentent un rendement de conversion en puissance (PCE) stable de 2,36 % avec une tension en circuit ouvert (VOC) de 0,97 V.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)