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1. (WO2019067455) LASER ARCHITECTURES USING QUANTUM WELL INTERMIXING TECHNIQUES
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Pub. No.: WO/2019/067455 International Application No.: PCT/US2018/052679
Publication Date: 04.04.2019 International Filing Date: 25.09.2018
IPC:
H01S 5/16 (2006.01) ,H01S 5/40 (2006.01) ,H01S 5/042 (2006.01) ,H01S 5/10 (2006.01) ,H01S 5/22 (2006.01) ,H01S 5/34 (2006.01) ,H01S 5/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
16
Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
40
Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02-H01S5/30128
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
04
Processes or apparatus for excitation, e.g. pumping
042
Electrical excitation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
10
Construction or shape of the optical resonator
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
22
having a ridge or a stripe structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
30
Structure or shape of the active region; Materials used for the active region
34
comprising quantum well or superlattice structures, e.g. single quantum well lasers (SQW-lasers), multiple quantum well lasers (MQW-lasers), graded index separate confinement heterostructure lasers (GRINSCH-lasers)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
5
Semiconductor lasers
20
Structure or shape of the semiconductor body to guide the optical wave
Applicants:
MASSETA TECHNOLOGIES LLC [US/US]; Corporation Trust Center 1209 Orange Street Wilmington, Delaware 19801, US
Inventors:
Agent:
NGUYEN, Jean; US
Priority Data:
62/564,41928.09.2017US
Title (EN) LASER ARCHITECTURES USING QUANTUM WELL INTERMIXING TECHNIQUES
(FR) ARCHITECTURES DE LASER UTILISANT DES TECHNIQUES DE MÉLANGE DE PUITS QUANTIQUE
Abstract:
(EN) A laser chip including a plurality of stripes is disclosed, where a laser stripe can be grown with an initial optical gain profile, and its optical gain profile can be shifted by using an intermixing process. In this manner, multiple laser stripes can be formed on the same laser chip from the same epitaxial wafer, where at least one laser stripe can have an optical gain profile shifted relative to another laser stripe. For example, each laser stripe can have a shifted optical gain profile relative to its neighboring laser stripe, thereby each laser stripe can emit light with a different range of wavelengths. The laser chip can emit light across a wide range of wavelengths. Examples of the disclosure further includes different regions of a given laser stripe having different intermixing amounts.
(FR) L'invention concerne une puce de laser comprenant une pluralité de bandes, une bande de laser pouvant être mise en croissance avec un profil de gain optique initial, et son profil de gain optique pouvant être décalé en utilisant un processus de mélange. De cette manière, de multiples bandes de laser peuvent être formées sur la même puce de laser à partir de la même galette épitaxiale, au moins une bande de laser pouvant présenter un profil de gain optique décalé par rapport à une autre bande de laser. Chaque bande de laser peut, par exemple, présenter un profil de gain optique décalé par rapport à sa bande de laser voisine, de sorte que chaque bande de laser peut émettre de la lumière avec une plage de longueurs d'onde différente. La puce de laser peut émettre de la lumière sur une large plage de longueurs d'onde. Des exemples de l'invention comprennent en outre différentes régions d'une bande de laser donnée ayant des quantités de mélange différentes.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)