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1. (WO2019067182) MESA SHAPED MICRO LIGHT EMITTING DIODE WITH BOTTOM N-CONTACT
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/067182 International Application No.: PCT/US2018/049962
Publication Date: 04.04.2019 International Filing Date: 07.09.2018
IPC:
H01L 33/10 (2010.01) ,H01L 25/075 (2006.01) ,H01L 25/16 (2006.01) ,H01L 33/00 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/20 (2010.01) ,H01L 33/24 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/42 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
10
with a light reflecting structure, e.g. semiconductor Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
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the devices being of types provided for in two or more different main groups of groups H01L27/-H01L51/139
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
20
with a particular shape, e.g. curved or truncated substrate
24
of the light emitting region, e.g. non-planar junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
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containing only elements of group III and group V of the periodic system
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containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
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Materials therefor
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Transparent materials
Applicants:
FACEBOOK TECHNOLOGIES, LLC [US/US]; 1601 Willow Road Menlo Park, CA 94025, US
Inventors:
OYER, Celine, Claire; US
Agent:
HULSE, Robert, A.; US
AHN, Dohyun; US
AMSEL, Jason; US
BINGHAM, Jonathan, W.; US
BRANNON, Brian, G.; US
Priority Data:
15/721,41729.09.2017US
Title (EN) MESA SHAPED MICRO LIGHT EMITTING DIODE WITH BOTTOM N-CONTACT
(FR) MICRO-DIODE ÉLECTROLUMINESCENTE EN FORME DE STRUCTURE MESA AVEC CONTACT N INFÉRIEUR
Abstract:
(EN) A light emitting diode (LED) with a first electrical contact at the top of the LED and a second electrical contact at the bottom of the LED. Layers of materials are formed on a substrate. The layers of materials include a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first and second semiconductor layers for producing light responsive to passing current through the light emitting layer. The formed layers of material are shaped into at least one semiconductor structure. A first electrical contact is formed on a top of the semiconductor structure, and a second electrical contact is formed at a bottom of the semiconductor structure. The second electrical contact is at least partially transparent.
(FR) Cette invention concerne diode électroluminescente (DEL) avec un premier contact électrique sur le haut de la DEL et un second contact électrique sur le bas de La DEL. Des couches de matériaux sont formées sur un substrat. Les couches de matériaux comprennent une première couche de semi-conducteur, une seconde de couche semi-conducteur, et une couche électroluminescente entre les première et seconde couches de semi-conducteur pour produire de la lumière en réponse au passage de courant à travers la couche électroluminescente. Les couches de matériau formées sont façonnées en au moins une structure semi-conductrice. Un premier contact électrique est formé sur un haut de structure semi-conductrice et un second contact électrique est formé sur un bas de la structure semi-conductrice. Le second contact électrique est au moins partiellement transparent.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)