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1. (WO2019067177) HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
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Pub. No.: WO/2019/067177 International Application No.: PCT/US2018/049869
Publication Date: 04.04.2019 International Filing Date: 07.09.2018
IPC:
H01L 21/20 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
ALTA DEVICES, INC. [US/US]; 525 Oakmead Parkway Sunnyvale, California 94085, US
Inventors:
WASHINGTON, Lori D.; US
BOUR, David P.; US
HIGASHI, Gregg; US
HE, Gang; US
Agent:
CASTRO, Francisco; US
HARRINGTON, Colin; US
GARDNER, Brett; US
WILKINSON, Yi; US
ADAWI, Nabil; US
Priority Data:
15/717,69427.09.2017US
Title (EN) HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
(FR) DÉPÔT À VITESSE DE CROISSANCE ÉLEVÉE DE MATÉRIAUX DU GROUPE III/V
Abstract:
(EN) Aspects of the disclosure relate to processes for epitaxial growth of Group III/V materials at high rates, such as about 30 µm/hr or greater, for example, about 40 µm/hr, about 50 µm/hr, about 55 µm/hr, about 60 µm/hr, about 70 µm/hr, about 80 µm/hr, and about 90-120 µm/hr deposition rates. The Group III/V materials or films may be utilized in solar, semiconductor, or other electronic device applications. The Group III/V materials may be formed or grown on a sacrificial layer disposed on or over the support substrate during a vapor deposition process. Subsequently, the Group III/V materials may be removed from the support substrate during an epitaxial lift off (ELO) process. The Group III/V materials are thin films of epitaxially grown layers containing gallium arsenide, gallium aluminum arsenide, gallium indium arsenide, gallium indium arsenide nitride, gallium aluminum indium phosphide, phosphides thereof, nitrides thereof, derivatives thereof, alloys thereof, or combinations thereof.
(FR) L'invention, selon certains aspects, concerne des procédés de croissance épitaxiale de matériaux du groupe III/V à des vitesses élevées, telles que des vitesses de dépôt d'environ 30 µm/h, ou plus, par exemple, d'environ 40 µm/h, d'environ 50 µm/h, d'environ 55 µm/h, d'environ 60 µm/h, d'environ 70 µm/h, d'environ 80 µm/h et d'environ 90 à 120 µm/h. Les matériaux ou films du groupe III/V déposés peuvent être utilisés dans des applications solaires, de semi-conducteurs ou d'autres dispositifs électroniques. Les matériaux du groupe III/V peuvent être formés ou croître sur une couche sacrificielle disposée sur le substrat de support pendant un traitement de dépôt en phase vapeur. Les matériaux du groupe III/V peuvent ensuite être retirés du substrat de support pendant un traitement de décollement épitaxial (ELO). Les matériaux du groupe III/V sont des films minces de couches formées par croissance épitaxiale qui contiennent de l'arséniure de gallium, de l'arséniure de gallium et d'aluminium, de l'arséniure de gallium et d'indium, de l'arséniure-nitrure de gallium et d'indium, du phosphure de gallium, d'aluminium et d'indium, leurs phosphures, leurs nitrures, leurs dérivés, leurs alliages, ou leurs combinaisons.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)