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1. (WO2019067158) FLASH MEMORY DEVICES AND RELATED METHODS
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Pub. No.: WO/2019/067158 International Application No.: PCT/US2018/048951
Publication Date: 04.04.2019 International Filing Date: 30.08.2018
IPC:
H01L 27/11521 (2017.01) ,H01L 27/11524 (2017.01) ,H01L 27/11568 (2017.01) ,H01L 27/1157 (2017.01)
[IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for ERROR IPC Code incorrect: invalid subgroup (0=>999999)!][IPC code unknown for H01L 27/1157]
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
LIU, Haitao; US
HUANG, Guangyu; US
PARAT, Krishna K.; US
KUNAL, Shrotri B.; US
JAYANTI, Srikant; SG
Agent:
OSBORNE, David W.; US
Priority Data:
15/721,77130.09.2017US
Title (EN) FLASH MEMORY DEVICES AND RELATED METHODS
(FR) DISPOSITIFS DE MÉMOIRE FLASH ET PROCÉDÉS ASSOCIÉS
Abstract:
(EN) Flash memory technology is disclosed. In one example, a flash memory cell can include a charge storage structure, a control gate laterally separated from the charge storage structure, and at least four dielectric layers disposed between the control gate and the charge storage structure. Associated systems and methods are also disclosed.
(FR) L'invention concerne une technologie de mémoire flash. Selon un exemple, une cellule de mémoire flash peut comprendre une structure de stockage de charge, une grille de commande séparée latéralement de la structure de stockage de charge, et au moins quatre couches diélectriques disposées entre la grille de commande et la structure de stockage de charge. La présente invention concerne également des systèmes et des procédés associés.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)