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1. (WO2019067137) THIN FILM ENCAPSULATION SCATTERING LAYER BY PECVD
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Pub. No.: WO/2019/067137 International Application No.: PCT/US2018/048260
Publication Date: 04.04.2019 International Filing Date: 28.08.2018
IPC:
H01L 51/52 (2006.01) ,H01L 51/56 (2006.01) ,H01L 51/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56
Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
Applicants:
APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, California 95054, US
Inventors:
WU, Wen-Hao; US
CHEN, Jrjyan Jerry; US
Agent:
PATTERSON, B. Todd; US
VERSTEEG, Steven H.; US
Priority Data:
15/719,06728.09.2017US
Title (EN) THIN FILM ENCAPSULATION SCATTERING LAYER BY PECVD
(FR) COUCHE DE DIFFUSION D'ENCAPSULATION EN COUCHES MINCES PAR PECVD
Abstract:
(EN) Embodiments described herein generally related to a method for manufacturing an encapsulating structure for a display device, more particularly, for manufacturing a TFE structure including a light scattering layer. The TFE structure further includes one or more barrier layers. All layers of the TFE structure are formed in a PECVD apparatus. The light scattering layer is formed by a PECVD process, in which a silicon containing precursor and a nitrogen containing precursor are introduced into the PECVD apparatus. The flow rate of the silicon containing precursor is equal to or greater than the flow rate of the nitrogen containing precursor. The light scattering layer enhances light out-coupling from a light emitting device disposed under the TFE structure.
(FR) Selon divers modes de réalisation, la présente invention concerne de manière générale un procédé de fabrication d'une structure d'encapsulation pour un dispositif d'affichage, plus particulièrement, de fabrication d'une structure d'encapsulation en couches minces (TFE) comprenant une couche de diffusion de lumière. La structure TFE comprend en outre une ou plusieurs couches barrières. Toutes les couches de la structure TFE sont formées dans un appareil de dépôt chimique en phase vapeur assisté par plasma (PECVD). La couche de diffusion de lumière est formée par un procédé PECVD dans lequel un précurseur contenant du silicium et un précurseur contenant de l'azote sont introduits dans l'appareil PECVD. Le débit du précurseur contenant du silicium est égal ou supérieur au débit du précurseur contenant de l'azote. La couche de diffusion de lumière améliore le couplage de sortie de lumière d'un dispositif électroluminescent disposé sous la structure TFE.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)