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1. (WO2019066997) ELECTROMAGNETIC INTERFERENCE SHIELD CREATED ON PACKAGE USING HIGH THROUGHPUT ADDITIVE MANUFACTURING
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Pub. No.: WO/2019/066997 International Application No.: PCT/US2017/054681
Publication Date: 04.04.2019 International Filing Date: 30.09.2017
IPC:
H01L 23/552 (2006.01) ,H01L 25/07 (2006.01) ,H01L 23/00 (2006.01) ,H01L 23/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
552
Protection against radiation, e.g. light
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
58
Structural electrical arrangements for semiconductor devices not otherwise provided for
64
Impedance arrangements
66
High-frequency adaptations
Applicants:
EID, Feras [LB/US]; US
BRAUNISCH, Henning [US/US]; US
LIFF, Shawna M. [US/US]; US
DOGIAMIS, Georgios C. [GR/US]; US
SWAN, Johanna M.; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
EID, Feras; US
BRAUNISCH, Henning; US
LIFF, Shawna M.; US
DOGIAMIS, Georgios C.; US
SWAN, Johanna M.; US
Agent:
ROJO, Estiven; US
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
SULLIVAN, Stephen G.; US
Priority Data:
Title (EN) ELECTROMAGNETIC INTERFERENCE SHIELD CREATED ON PACKAGE USING HIGH THROUGHPUT ADDITIVE MANUFACTURING
(FR) BLINDAGE CONTRE LES INTERFÉRENCES ÉLECTROMAGNÉTIQUES CRÉÉ SUR UN BOÎTIER PAR FABRICATION ADDITIVE À HAUT RENDEMENT
Abstract:
(EN) A device package and a method of forming the device package are described. The device package includes a substrate having a ground plane and dies disposed on the substrate. The dies are electrically coupled to the substrate with solder balls or bumps surrounded by an underfill layer. The device package has a mold layer disposed over and around the dies, the underfill layer, and the substrate. The device package further includes an additively manufactured electromagnetic interference (EMI) shield layer disposed on an outer surface of the mold layer. The additively manufactured EMI shield layer is electrically coupled to the ground plane of the substrate. The outer surface of the mold layer may include a topmost surface and one or more sidewalls that are covered with the additively manufactured EMI shield layer. The additively manufactured EMI shield may include a first and second additively manufactured EMI shield layers and an additively manufactured EMI shield frame.
(FR) L'invention concerne un boîtier de dispositif et un procédé de formation du boîtier de dispositif. Le boîtier de dispositif comprend un substrat comportant un plan de masse et des puces disposées sur le substrat. Les puces sont couplées électriquement au substrat par des billes ou bosses de soudure entourées par une couche métallique en retrait. Le boîtier de dispositif comporte une couche de moule disposée sur les puces, la couche métallique en retrait et le substrat et autour de ces derniers. Le boîtier de dispositif comprend en outre une couche de protection contre les interférences électromagnétiques (EMI) fabriquée de manière additive disposée sur une surface extérieure de la couche de moule. La couche de blindage contre les EMI fabriquée de manière additive est électriquement couplée au plan de masse du substrat. La surface extérieure de la couche de moule peut comprendre une surface située la plus en haut et une ou plusieurs parois latérales qui sont recouvertes de la couche de blindage contre les EMI fabriquée de manière additive. Le blindage contre les EMI fabriqué de manière additive peut comprendre des première et seconde couches de blindage contre les EMI fabriquées de manière additive et un cadre de blindage contre les EMI fabriqué de manière additive.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)