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1. (WO2019066974) GROUP III-NITRIDE ANTENNA DIODE
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Pub. No.: WO/2019/066974 International Application No.: PCT/US2017/054632
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 29/861 (2006.01) ,H01L 29/66 (2006.01) ,H01L 29/51 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
49
Metal-insulator semiconductor electrodes
51
Insulating materials associated therewith
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd. Santa Clara, California 95054, US
Inventors:
GOSSNER, Harald; DE
BAUMGARTNER, Peter; DE
HODEL, Uwe; DE
SIPRAK, Domagoj; DE
LEUSCHNER, Stephan; DE
GEIGER, Richard; DE
THEN, Han Wui; US
RADOSAVLJEVIC, Marko; US
DASGUPTA, Sansaptak; US
Agent:
GUGLIELMI, David L.; US
Priority Data:
Title (EN) GROUP III-NITRIDE ANTENNA DIODE
(FR) DIODES D'ANTENNE DE NITRURE DE GROUPE III
Abstract:
(EN) A Group III-Nitride (III-N) device structure is presented comprising: a heterostructure having three or more layers comprising III-N material, a cathode comprising donor dopants, wherein the cathode is on a first layer of the heterostructure, an anode within a recess that extends through two or more of the layers of the heterostructure, wherein the anode comprises a first region wherein the anode is separated from the heterostructure by a high k dielectric material, and a second region wherein the anode is in direct contact with the heterostructure, and a conducting region in the first layer in direct contact to the cathode and conductively connected to the anode. Other embodiments are also disclosed and claimed.
(FR) L'invention concerne une structure de dispositif de nitrure de groupe III (III-N) comprenant : une hétérostructure ayant trois couches ou plus comprenant un matériau III-N, une cathode comprenant des dopants donneurs, la cathode se trouvant sur une première couche de l'hétérostructure, une anode à l'intérieur d'un évidement qui s'étend à travers au moins deux des couches de l'hétérostructure, l'anode comprenant une première région dans laquelle l'anode est séparée de l'hétérostructure par un matériau diélectrique à constante diélectrique élevée, et une seconde région dans laquelle l'anode est en contact direct avec l'hétérostructure, et une région conductrice dans la première couche en contact direct avec la cathode et connectée de manière conductrice à l'anode. L'invention concerne également d'autres modes de réalisation.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)