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1. (WO2019066964) 1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT
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Pub. No.: WO/2019/066964 International Application No.: PCT/US2017/054597
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 27/108 (2006.01) ,H01L 27/115 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
108
Dynamic random access memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
112
Read-only memory structures
115
Electrically programmable read-only memories
Applicants:
PILLARISETTY, Ravi [US/US]; US
SHARMA, Abhishek A. [IN/US]; US
DOYLE, Brian S. [IE/US]; US
KARPOV, Elijah V. [US/US]; US
MAJHI, Prashant [IN/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
PILLARISETTY, Ravi; US
SHARMA, Abhishek A.; US
DOYLE, Brian S.; US
KARPOV, Elijah V.; US
MAJHI, Prashant; US
Agent:
SULLIVAN, Stephen G.; US
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
ROJO, Estiven; US
Priority Data:
Title (EN) 1S-1C DRAM WITH A NON-VOLATILE CBRAM ELEMENT
(FR) DRAM 1S-1C AVEC ÉLÉMENT CBRAM NON VOLATILE
Abstract:
(EN) One embodiment of a memory device comprises a selector and a storage capacitor in series with the selector. A further embodiment comprises a conductive bridging RAM (CBRAM) in parallel with a storage capacitor coupled between the selector and zero volts. A plurality of memory devices form a 1S-1C or a 1S-1C-CBRAM cross-point DRAM array with 4F2 or less density.
(FR) Un mode de réalisation d'un dispositif de mémoire comprend un sélecteur et un condensateur mémoire en série avec le sélecteur. Un autre mode de réalisation comprend une mémoire résistive à pont conducteur (CBRAM) en parallèle avec un condensateur mémoire couplé entre le sélecteur et zéro volt. Une pluralité de dispositifs de mémoire forment un réseau DRAM à point de croisement 1S-1C ou CBRAM 1S-1C avec une densité inférieure ou égale à 4F2.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)