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1. (WO2019066955) MULTI-STEP LATERAL EPITAXIAL OVERGROWTH FOR LOW DEFECT DENSITY III-N FILMS
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Pub. No.: WO/2019/066955 International Application No.: PCT/US2017/054579
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 21/768 (2006.01) ,H01L 21/02 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
DASGUPTA, Sansaptak; US
THEN, Han Wui; US
RADOSAVLJEVIC, Marko; US
AGABABOV, Pavel M.; US
Agent:
GREEN, Blayne; US
Priority Data:
Title (EN) MULTI-STEP LATERAL EPITAXIAL OVERGROWTH FOR LOW DEFECT DENSITY III-N FILMS
(FR) SURCROISSANCE ÉPITAXIALE LATÉRALE EN PLUSIEURS ÉTAPES DE FILMS DE III-N À FAIBLE DENSITÉ DE DÉFAUTS
Abstract:
(EN) Techniques related to forming low defect density III-N films, device structures, and systems incorporating such films are discussed. Such techniques include epitaxially growing a first crystalline III-N structure within an opening of a first dielectric layer and extending onto the first dielectric layer, forming a second dielectric layer over the first dielectric layer and laterally adjacent to a portion of the first structure, and epitaxially growing a second crystalline III-N structure extending laterally onto a region of the second dielectric layer.
(FR) L'invention concerne des techniques associées à la formation de films de III-N à faible densité de défauts, des structures de dispositif et des systèmes incorporant de tels films. Ces techniques consistent à faire croître de manière épitaxiale une première structure cristalline de III-N à l'intérieur d'une ouverture d'une première couche diélectrique et s'étendant sur la première couche diélectrique, à former une seconde couche diélectrique sur la première couche diélectrique et latéralement adjacente à une partie de la première structure, et à faire croître de manière épitaxiale une seconde structure cristalline de III-N s'étendant latéralement sur une région de la seconde couche diélectrique.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)