Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019066936) LIGHT EMITTING DEVICES WITH QUANTUM WELL STRUCTURES ON SEMI-POLAR OR NON-POLAR CRYSTAL PLANES
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/066936 International Application No.: PCT/US2017/054475
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 33/04 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
DASGUPTA, Sansaptak; US
THEN, Han Wui; US
RADOSAVLJEVIC, Marko; US
FISCHER, Paul; US
LIN, Kevin; US
Agent:
HOWARD, James; US
Priority Data:
Title (EN) LIGHT EMITTING DEVICES WITH QUANTUM WELL STRUCTURES ON SEMI-POLAR OR NON-POLAR CRYSTAL PLANES
(FR) DISPOSITIFS ÉLECTROLUMINESCENTS COMPORTANT DES STRUCTURES DE PUITS QUANTIQUE SUR DES PLANS CRISTALLINS SEMI-POLAIRES OU NON POLAIRES
Abstract:
(EN) Light emitting devices including a quantum well (QW) structure over a semi-polar or non-polar plane of a III-N crystal. Quantum efficiency may be improved where electric fields associated with polar material interfaces are reduced or avoided within the QW structure. A multi-step epitaxial growth may be performed from a Group IV substrate, such as silicon. The growth may initiate from within a trench in an amorphous substrate mask, from a fin of substrate material, or from a surface of a pit in the substrate. Epitaxial growth of the III-N crystal along the c-axis generates a semi-polar or polar plane upon which the QW structure is then grown. Device contacts are coupled across the QW structure. One of the contacts may be through the substrate and an impurity-doped portion of the III-N crystal below the QW structure.
(FR) L'invention concerne des dispositifs électroluminescents comprenant une structure de puits quantique (QW) sur un plan semi-polaire ou non polaire d'un cristal de III-N. Il est possible d'améliorer l'efficacité quantique lorsque l'on réduit ou évite des champs électriques associés à des interfaces de matériau polaire à l'intérieur de la structure de QW. Il est possible d'obtenir une croissance épitaxiale en plusieurs étapes au moyen d'un substrat du groupe IV, tel qu'en silicium. La croissance peut commencer à partir de l'intérieur d'une tranchée dans un masque de substrat amorphe, à partir d'une ailette de matériau de substrat, ou à partir d'une surface d'une dépression régulière du substrat. La croissance épitaxiale du cristal de III-N le long de l'axe c génère un plan semi-polaire ou polaire sur lequel croît ensuite la structure de QW. Des contacts de dispositif sont couplés à travers la structure de QW. L'un des contacts peut être établi à travers le substrat et une partie dopée par des impuretés du cristal de III-N sous la structure de QW.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)