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1. (WO2019066908) GROUP III-NITRIDE POLARIZATION JUNCTION DIODES
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Pub. No.: WO/2019/066908 International Application No.: PCT/US2017/054358
Publication Date: 04.04.2019 International Filing Date: 29.09.2017
IPC:
H01L 29/861 (2006.01) ,H01L 29/66 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Blvd Santa Clara, California 95054, US
Inventors:
THEN, Han, Wui; US
RADOSAVLJEVIC, Marko; US
DASGUPTA, Sansaptak; US
Agent:
HOWARD, James; US
Priority Data:
Title (EN) GROUP III-NITRIDE POLARIZATION JUNCTION DIODES
(FR) DIODES À JONCTIONS DE POLARISATION AU NITRURE DU GROUPE III
Abstract:
(EN) Diodes employing one or more Group Ill-Nitride polarization junctions. A III-N polarization junction may include two III-N material layers having opposite crystal polarities. The opposing polarities may induce a two-dimensional charge sheet (e.g., 2D electron gas) within each of the two III-N material layers. Opposing crystal polarities may be induced through introduction of an intervening layer between two III-N material layers. The intervening layer may be of a material other than a Group Ill-Nitride. Where a P-i-N diode structure includes two Group Ill-Nitride polarization junctions, opposing crystal polarities at a first of such junctions may induce a 2D electron gas (2DEG), while opposing crystal polarities at a second of such junctions may induce a 2D hole gas (2DHG). Diode terminals may then couple to each of the 2DEG and 2DHG.
(FR) L'invention concerne des diodes faisant appel à une ou plusieurs jonctions de polarisation au nitrure du groupe III. Une jonction de polarisation au III-N peut comprendre deux couches de matériau de III-N ayant des polarités cristallines contraires. Les polarités contraires peuvent induire une feuille de charge bidimensionnelle (par exemple, un gaz d'électrons 2D) à l'intérieur de chacune des deux couches de matériau de III-N. Des polarités cristallines contraires peuvent être induites par l'introduction d'une couche intermédiaire entre deux couches de matériau de III-N. La couche intermédiaire peut être constituée d'un matériau autre qu'un nitrure du groupe III. Lorsqu'une structure de diode P-i-N comprend deux jonctions de polarisation au nitrure du groupe III, des polarités cristallines contraires au niveau d'une première de ces jonctions peuvent induire un gaz d'électrons 2D (2DEG), tandis que des polarités cristallines contraires au niveau d'une seconde de ces jonctions peuvent induire un gaz de trou 2D (2DHG). Des bornes de diode peuvent ensuite se coupler à chacun des 2DEG et 2DHG.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)