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1. (WO2019066881) SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL CURRENT AND COMPUTING DEVICE COMPRISING THE SAME
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/066881 International Application No.: PCT/US2017/054195
Publication Date: 04.04.2019 International Filing Date: 28.09.2017
IPC:
H01L 43/02 (2006.01) ,H01L 43/08 (2006.01) ,H01L 49/00 (2006.01) ,H01L 43/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49
Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
Applicants:
DOYLE, Brian S. [IE/US]; US
MAJHI, Prashant [IN/US]; US
OGUZ, Kaan [TR/US]; US
O'BRIEN, Kevin P. [US/US]; US
SHARMA, Abhishek A. [IN/US]; US
KENCKE, David L. [US/US]; US
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054, US
Inventors:
DOYLE, Brian S.; US
MAJHI, Prashant; US
OGUZ, Kaan; US
O'BRIEN, Kevin P.; US
SHARMA, Abhishek A.; US
KENCKE, David L.; US
Agent:
BRASK, Justin K.; US
AUYEUNG, Al; US
BERNADICOU, Michael A.; US
BLAIR, Steven R.; US
BLANK, Eric S.; US
COFIELD, Michael A.; US
DANSKIN, Timothy A.; US
HALEVA, Aaron S.; US
MAKI, Nathan R.; US
MARLINK, Jeffrey S.; US
MOORE, Michael S.; US
PARKER, Wesley E.; US
PUGH, Joseph A.; US
RASKIN, Vladimir; US
STRAUSS, Ryan N.; US
WANG, Yuke; US
YATES, Steven D.; US
SULLIVAN, Stephen G.; US
ROJO, Estiven; US
Priority Data:
Title (EN) SPIN TRANSFER TORQUE MEMORY (STTM) DEVICES WITH DECREASED CRITICAL CURRENT AND COMPUTING DEVICE COMPRISING THE SAME
(FR) DISPOSITIFS DE MÉMOIRE À COUPLE DE TRANSFERT DE SPIN (STTM) À COURANT CRITIQUE RÉDUIT ET DISPOSITIF INFORMATIQUE LES COMPRENANT
Abstract:
(EN) Spin transfer torque memory (STTM) devices incorporating an Insulator-Metal-Transition (IMT) device or at least one layer of Insulator-Metal-Transition (IMT) material are disclosed. The Insulator-Metal-Transition (IMT) device or at least one layer of Insulator-Metal-Transition (IMT) material are utilized for providing a spike current when the voltage across it exceeds the threshold voltage to reduce a critical current required for transfer torque induced magnetization switching.
(FR) L'invention concerne des dispositifs de mémoire à couple de transfert de spin (STTM) incorporant un dispositif à transition isolant-métal (IMT) ou au moins une couche de matériau à transition isolant-métal (IMT). Le dispositif à transition isolant-métal (IMT) ou l'au moins une couche de matériau à transition isolant-métal (IMT) sont utilisés pour fournir un courant de pointe lorsque la tension aux bornes de ceux-ci dépasse la tension de seuil afin de réduire le courant critique requis pour la commutation d'aimantation induite par couple de transfert.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)